Requirements imposed on the electrical properties of the absorber layer in CdTe-based solar cells

Kosyachenko, L. A.; Motushchuk, V. V.; Sklyarchuk, O. F.; Mathew, Xavier

doi:10.1007/s10854-007-9317-2

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…Other authors assume that the doping is in the same order of magnitude but is compensated to an effective doping of about 10 14 cm À 3 [21,22]. Kosyachenko et al [23] assume a high concentration of native impurities and defects (more than 10 15 cm À 3 ), which should be exceeded significantly by the concentration of shallow acceptor impurities in order to minimize the electrical losses. Fritsche et al [24] conclude from photoelectron spectroscopy measurements that the bulk material is intrinsic, which would mean that the doping concentration is 10 13 cm À 3 or less [25].…”

Section: Electrical Properties Of Cdte Solar Cellsmentioning

confidence: 99%

Modelling the quantum efficiency of cadmium telluride solar cells

Hädrich

Metzner

Reislöhner

et al. 2011

Solar Energy Materials and Solar Cells

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Section: Electrical Properties Of Cdte Solar Cellsmentioning

confidence: 99%

Modelling the quantum efficiency of cadmium telluride solar cells

Hädrich

Metzner

Reislöhner

et al. 2011

Solar Energy Materials and Solar Cells

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“…However, it remains at the level of 17-18.5% for lifetimes within the range of 10 -9 -10 -10 s. To increase the efficiency to the theoretical limit (28-30%), it is necessary to increase the charge carrier lifetime in the CdTe layer to about 10 −6 s and increase its thickness to several tens of micrometers. However, this is not economically justified [45]. An analysis of optical losses in thin-film CdS/CdTe solar cells with a transparent conducting layer of ITO or SnO2 showed that even with 100% efficiency of photovoltaic conversion in CdTe and minimal thickness of CdS and ITO layers, the short-circuit current density (Jsc) cannot exceed more than 60% of the maximum possible value [46].…”

Section: Thin-film Heterostructures Based On Cdte In Solar Energymentioning

confidence: 99%

Solar cells based on CdTe thin films (Part II)

Mazur

Вакалюк

2023

Phys. Chem. Solid St.

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This paper discusses the use of semiconductor solar cells based on thin-film cadmium telluride (CdTe) in modern energy production. The advantages and disadvantages of using CdTe thin-film solar cells are analyzed, and arguments are presented in favor of the implementation of mass production technologies for CdTe solar modules, which can compete with silicon analogs in terms of compromise between efficiency and cost. The physical and chemical properties of the binary Cd-Te system are described, and the relationship between the physical, chemical, electrical, and optical properties of CdTe is analyzed, making it attractive for use in thin-film solar cells. Special attention is given to the investigation of photovoltaic properties, which are important parameters for determining photoconductivity, and the advantages and disadvantages of CdTe film photovoltaic properties are discussed. CdTe thin-film heterostructures (HSs), which are important components of modern solar cells, are considered, and their main advantages and disadvantages are described. It is argued that simple methods of manufacturing and forming HSs, which do not require complex and expensive equipment, are an important advantage of CdTe-based solar cell technology.

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“…In the case of compensation, the position of the Fermi level, and hence the electrical conductivity of the material is determined by the partially compensated upper acceptor level. Depending on the position of this level in the bandgap, the hole concentration in the valence band can vary in a wide range, while the concentration of uncompensated acceptors remains of the same order of magnitude (as the total acceptor concentration) [22].…”

Section: The Density Of Total Short-circuit Currentmentioning

confidence: 99%

Dependence of charge collection in thin-film CdTe solar cells on the absorber layer parameters

Kosyachenko¹,

Grushko²,

Савчук³

2008

Semicond. Sci. Technol.

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Charge collection efficiency in thin-film CdS/CdTe solar cells is discussed taking into consideration losses caused by a finite thickness of the p-CdTe layer, as well as recombination losses at the front and back surfaces. The dependences of the drift and diffusion components of the short-circuit current on the uncompensated acceptor concentration, charge carrier lifetime, recombination velocities at the CdS-CdTe interface and the back surface of the CdTe layer, as well as on its thickness, have been determined and discussed. It is shown that practically the total collection of charges generated by AM1.5 solar radiation, the uncompensated acceptor concentration, electron lifetime and thickness of the CdTe absorber layer should be equal to 10 15 -10 16 cm −3 , 10 −9 -10 −8 s and several tens of micrometres, respectively.

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Requirements imposed on the electrical properties of the absorber layer in CdTe-based solar cells

Cited by 7 publications

References 7 publications

Modelling the quantum efficiency of cadmium telluride solar cells

Modelling the quantum efficiency of cadmium telluride solar cells

Solar cells based on CdTe thin films (Part II)

Dependence of charge collection in thin-film CdTe solar cells on the absorber layer parameters

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