“…A ReS 2 synaptic memory device based on a high- k dielectric stack (Al 2 O 3 /ZrO 2 /Al 2 O 3 ) exhibits preeminent electrical characteristics, such as high on/off current ratio (over ∼10 6 ), large memory window (4 V at the 5 V sweeping voltage), fast programming and erasing speed, and excellent retention ability . The floating gate memory device (ReS 2 , graphene, and BN act as a channel, floating gate, and tunneling dielectric layer, respectively) can achieve the multilevel flash storage, photoelectric storage, and negative photoconductance effect. − In summary, the stable property in the air, weak interlayer coupling, and independent-layer bandgap make ReS 2 a new 2D TMDC, which has the great potential for application to logic transistors, photodetectors, memory devices, etc. Also, the ultrahigh photoresponsivity is its unique advantage compared to other 2D TMDCs.…”