2020
DOI: 10.1002/aelm.202000925
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ReS2/h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

Abstract: A 2D heterostructure consisting of few‐layer direct bandgap ReS2, a thin h‐BN layer, and a monolayer graphene (Gr) for application to various electronic devices is investigated. Metal‐insulator‐semiconductor (MIS)‐type devices with 2D van‐der‐Waals (vdW) heterostructures are recently studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS2/h‐BN/Gr exhibit light tunable rectifying behaviors with low ideality factors and… Show more

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Cited by 20 publications
(9 citation statements)
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“…In this work, we designed the multilayer backgate ReS 2 /BN heterojunction FET and ReS 2 FET on the SiO 2 (285 nm)/Si substrate. Compared with previous similar research work, ,, the electric and photoelectric characteristics of ReS 2 are systematically studied in our work, and the Schottky barrier height and R contact of ReS 2 FET are also calculated by variable temperature electric measurements and the Y-function method. In addition, the research on device-to-device variability reveals the influences of ReS 2 thickness on device performance.…”
Section: Introductionmentioning
confidence: 98%
See 1 more Smart Citation
“…In this work, we designed the multilayer backgate ReS 2 /BN heterojunction FET and ReS 2 FET on the SiO 2 (285 nm)/Si substrate. Compared with previous similar research work, ,, the electric and photoelectric characteristics of ReS 2 are systematically studied in our work, and the Schottky barrier height and R contact of ReS 2 FET are also calculated by variable temperature electric measurements and the Y-function method. In addition, the research on device-to-device variability reveals the influences of ReS 2 thickness on device performance.…”
Section: Introductionmentioning
confidence: 98%
“…A ReS 2 synaptic memory device based on a high- k dielectric stack (Al 2 O 3 /ZrO 2 /Al 2 O 3 ) exhibits preeminent electrical characteristics, such as high on/off current ratio (over ∼10 6 ), large memory window (4 V at the 5 V sweeping voltage), fast programming and erasing speed, and excellent retention ability . The floating gate memory device (ReS 2 , graphene, and BN act as a channel, floating gate, and tunneling dielectric layer, respectively) can achieve the multilevel flash storage, photoelectric storage, and negative photoconductance effect. In summary, the stable property in the air, weak interlayer coupling, and independent-layer bandgap make ReS 2 a new 2D TMDC, which has the great potential for application to logic transistors, photodetectors, memory devices, etc. Also, the ultrahigh photoresponsivity is its unique advantage compared to other 2D TMDCs.…”
Section: Introductionmentioning
confidence: 99%
“…The rGO/Si MS diodes had a turn-on voltage of 0.4 V, which increased to 4.4 V for the rGO/h-BN/Si MIS diodes. The diode is a tunneling diode with free charge states in graphene tunneling across the h-BN mono- and multilayer [ 42 ]. The tunneling barrier height of h-BN fabricated by a laser annealing technique on Si substrate is 3.1 eV [ 43 ].…”
Section: Discussionmentioning
confidence: 99%
“…As a newly emerged member of the 2D TMDs family, ReS 2 has been widely studied in the fields of electronics [ 18 , 19 ], optoelectronics [ 20 , 21 , 22 , 23 , 24 ], and catalysis [ 25 , 26 , 27 , 28 ] due to its advantageous features such as a large surface area, tunable active sites, layer-independent electric/optical properties, and structural/vibrational anisotropy. ReS 2 crystallizes in a twisted T phase with clusters of Re 4 units, forming one-dimensional chains in each single layer [ 29 ].…”
Section: Introductionmentioning
confidence: 99%