Research of a novel temperature adaptive gate driver for power metal‐oxide semiconductor

Abstract

Driving power metal-oxide semiconductor field-effect transistor at high frequency may induce significant switching losses, which have a great proportion in total power losses. Especially in the case of higher temperature, switching losses increased tangibly. A novel temperature adaptive gate driver with low power consumption in a high-temperature environment is proposed for switched-mode power supply by the temperature compensation technique. It has been realised to decrease the switching losses in wide scope temperature, and cannot sacrifice performance of the electromagnetic interferences, by regulating di/dt and dv/dt of switching curve in high temperature. A 0.25 μm, 40 V bipolar-CMOS-DMOS (BCD) process technology is utilised and experimental circuits and results are then presented. Compared with the conventional gate driver, the turn-on loss and turn-off loss of the temperature adaptive gate driver can be reduced, respectively, by 17% and 22%. At present, it has been used in an AC-DC converter to improve work efficiency.

One current adaptive switching strategy for DC/DC converter with spike limitation

“…It has a great influence on the switching speed, switching losses, current and voltage variations (d i /d t and d u /d t ), the efficiency and electromagnetic interference (EMI) of the converter [1–3]. In recent years, a lot of work regarding the gate‐drivers has been done and it mainly focuses on the drive capability, drive speed, isolated power supply and effective switching in [4–8], which most commonly utilises the conventional voltage source drivers (VSDs). However, VSDs have a defect that all the gate‐drive energy dissipated through the drive resistance R g and the fixed‐drive voltage could not optimise the power losses of the power switch.…”

Ultra‐fast MHz range driving circuit for SiC MOSFET using frequency multiplier with eGaN FET

“…The key technology required to exploit the superior high switching capability of WBG power devices is a driver capable of operating at high switching frequencies. Among the drivers for SiC power devices, voltage-driven MOSFET gate drivers [14][15][16][17] show relatively simple structures. Alternatively, drivers for SiC BJTs and SiC JFETs (including normally-on JFETs and normally-off JFETs) feature a two-stage driving method consisting of a pulsed high voltage supplying stage for turn-on and a continuous current generation stage for the on-state [18][19][20].…”

“…The proposed gate driving circuit enables multiplying the switching frequencies and spreading the losses of the components during fast switching conditions, since each half-bridge leg shares the losses. Therefore, no thermal management methods such as a heat spreader or heatsink are required for the devices to be cooled [17]. However, some components may not allow to be operated at MHz ranges or fail easily at this high switching frequency ranges.…”

Power loss analysis for switched reluctance motor converter by using electrothermal model

“…The third is based on the analysis. It treats the turn-on and turn-off waveforms as piecewise linear [15][16][17], it also needs the details of every switching event. The last is based on the lookup table that describes the relationship between the power loss and the device parameters such as current, voltage, junction temperature, gate drive voltage and so on [18,19].…”