Research on Cs activation mechanism for Ga0.5Al0.5As(001) and GaN(0001) surface

Shen, Yonghang; Chen, Liang; Qian, Yunsheng; Yao, Dong; Zhang, Shuqin; Wang, Meishan

doi:10.1016/j.apsusc.2014.10.088

Cited by 15 publications

(1 citation statement)

References 34 publications

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“…The enhancement of the photocurrent can be attributed to the formation of the surface Schottky barrier displayed in Figure 6 a,b. Since the work function of Au (φ Au = 5.1 eV) is larger than that of GaAs nanowires (φ GaAs = 4.78 eV) [ 49 , 50 , 51 ], the electrons at the interface between the GaAs nanowires and Au nanoparticles are more likely to flow to the inside of the Au nanoparticles. The outer negative and inner positive space charge regions are formed at the surface of GaAs nanowires.…”

Section: Resultsmentioning

confidence: 99%

GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification

et al. 2023

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A high-performance GaAs nanowire photodetector was fabricated based on the modification of Au nanoparticles (NPs). Au nanoparticles prepared by thermal evaporation were used to modify the defects on the surface of GaAs nanowires. Plasmons and Schottky barriers were also introduced on the surface of the GaAs nanowires, to enhance their light absorption and promote the separation of carriers inside the GaAs nanowires. The research results show that under the appropriate modification time, the dark current of GaAs nanowire photodetectors was reduced. In addition, photocurrent photodetectors increased from 2.39 × 10−10 A to 1.26 × 10−9 A. The responsivity of GaAs nanowire photodetectors correspondingly increased from 0.569 A∙W−1 to 3.047 A∙W−1. The reasons for the improvement of the photodetectors’ performance after modification were analyzed through the energy band theory model. This work proposes a new method to improve the performance of GaAs nanowire photodetectors.

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Section: Resultsmentioning

confidence: 99%