Research on Cs/O activation process of near-infrared In0.53Ga0.47As photocathodes

Based on first principle calculations, Ga rich and As(P) rich clean GaAs0.5P0.5(001) reconstruction surfaces and adsorbed surfaces with 0.125ML coverage of Cs at different sites are researched. Formation energy of Ga rich GaAs0.5P0.5(001) β2(4×2) reconstruction surface is smaller than that of As(P) rich one, and the work functions of Ga rich β2(4×2) and As(P) rich β2(2×4) surfaces are 4.657 eV and 5.187 eV, respectively. The adsorption energies of Cs adatoms on both surfaces are negative, showing that Cs adsorption is a stable exothermic process. The work functions of two surfaces both decrease after Cs adsorption, and the average variation of As(P) rich β2(2×4) surface is larger. Mulliken charge analysis shows that Cs adatoms transfer electrons to GaAsP substrate, resulting in Cs-GaAsP dioples which lower the work functions. When Cs atoms are located at D2 of Ga rich surface and D2' of As(P) rich surface, work function values of the two reconstruction surfaces reach the minimums, which are 2.834eV and 2.859eV, respectively. By calculating dipole moments, it can be found that Cs adatoms on the topmost layer form larger effective dipole moments with GaAsP substrate than the Cs atoms located in the trench.

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First principle research on Ga rich GaAs0.5P0.5(001) β2(4 × 2) and As(P) rich β2(2 × 4) reconstruction surfaces with and without Cs adsorption

Yang

Pei

2021

Opt Quant Electron

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Enhancement of near-infrared response of InGaAs photocathode through interaction of 1064 nm light with activated surface

Wang

Zhang

et al. 2023

Applied Surface Science

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Impact of residual gas on the optoelectronic properties of Cs-sensitized In0.53Ga0.47As (0 0 1) surface

Fang

Shen

Zhang

et al. 2021

Journal of Colloid and Interface Science

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Research on Cs/O activation process of near-infrared In0.53Ga0.47As photocathodes

Cited by 7 publications

References 43 publications

First principle research on Ga rich GaAs0.5P0.5(001) β2(4 × 2) and As(P) rich β2(2 × 4) reconstruction surfaces with and without Cs adsorption

First principle research on Ga rich GaAs0.5P0.5(001) β2(4 × 2) and As(P) rich β2(2 × 4) reconstruction surfaces with and without Cs adsorption

Enhancement of near-infrared response of InGaAs photocathode through interaction of 1064 nm light with activated surface

Impact of residual gas on the optoelectronic properties of Cs-sensitized In0.53Ga0.47As (0 0 1) surface

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