Research on fatigue of TSV-Cu under thermal and vibration coupled load based on numerical analysis

Fan, Zhengwei; Liu, Yao; Chen, Xun; Jiang, Yu; Zhang, Shufeng; Wang, Yashun

doi:10.1016/j.microrel.2020.113590

Cited by 18 publications

(4 citation statements)

References 46 publications

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“…In 2019, Zhengwei Fan et al studied the reliability of a typical TSV structure under thermal-vibration coupled loading, and obtained the maximum equivalent force, elastic and plastic strain response of the structure [ 96 ]. In 2020, based on fatigue theory and the multi-field coupling principle, Zhengwei Fan proposed a numerical analysis method for through-silicon-via copper (TSV-Cu) and analyzed the fatigue lifetime of the MEMS structure under thermal-vibration [ 97 ]. It was concluded that the fatigue lifetime was affected by the thermal-vibration stress obviously.…”

Section: Mems Reliability With Consideration Of Temperaturementioning

confidence: 99%

Reliability of MEMS inertial devices in mechanical and thermal environments: A review

Xu,

Liu,

et al. 2024

Heliyon

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Section: Mems Reliability With Consideration Of Temperaturementioning

confidence: 99%

Reliability of MEMS inertial devices in mechanical and thermal environments: A review

Xu,

Liu,

et al. 2024

Heliyon

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“…Additionally, the coefficients of thermal expansion of the TSV material and the substrate material may introduce large mechanical stresses, leading to delay variations in the driver through electrical-mechanical coupling [79,80]. Such delay variation may introduce bias for delay-sensitive clock tree designs, and, therefore, a robust physical design in 3D ICs with TSVs requires optimization in terms of coupling in the electrical, mechanical, and thermal domains [20,81,82].…”

Section: New Design Tools and Approachesmentioning

confidence: 99%

A Short Review of Through-Silicon via (TSV) Interconnects: Metrology and Analysis

Wang

Duan

et al. 2023

Applied Sciences

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This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

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“…Therefore, the precision of the processed TSV products is small and the error is large; thus, the deep silicon etching of TSV often adopts DRIE etching technology at present [ 27 ].…”

Section: Tsv Technology Process and Developmentmentioning

confidence: 99%

Research of Vertical via Based on Silicon, Ceramic and Glass

Tian

2023

Micromachines

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With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore’s Law because of its advantages of low energy consumption, lightweight and high performance. Through-silicon via (TSV) is considered to be at the core of 3D integration because of its excellent electrical performance, lower power consumption, wider bandwidth, higher density, smaller overall size and lighter weight. Therefore, the particular emphasis of this review is the process flow of TSV technology. Among them, the research status of TSV hole etching, deep hole electroplating filling and chemical mechanical planarization (CMP) in TSV preparation process are introduced in detail. There are a multitude of inevitable defects in the process of TSV processing; thus, the stress problems and electrical characteristics that affect the reliability of TSV are summarized in this review. In addition, the process flow and process optimization status of through ceramic via (TCV) and through glass via (TGV) are discussed.

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Research on fatigue of TSV-Cu under thermal and vibration coupled load based on numerical analysis

Cited by 18 publications

References 46 publications

Reliability of MEMS inertial devices in mechanical and thermal environments: A review

Reliability of MEMS inertial devices in mechanical and thermal environments: A review

A Short Review of Through-Silicon via (TSV) Interconnects: Metrology and Analysis

Research of Vertical via Based on Silicon, Ceramic and Glass

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