Research on Infrared Photonic Crystal for CMOS Compatible Thermopile

Cheng, C.H.; Chen, Shu-Jung; Shen, Chih-Hsiung

doi:10.1166/sl.2012.2288

Cited by 1 publication

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“…Among these studies, the research issues of infrared absorption technology mainly are focused on improving the absorption efficiency and sensitivity of the sensing film. Among these research, the interference-type ultra-thin metal film or quarter-wavelength structure [ 18 , 19 ] above the sensing area are fabricated through the sputtering or evaporation process, which can enhance the absorption of IR heat radiation within a specific range. This thin film process is compatible with semiconductor processes and proceeded after the fabrication of device.…”

Section: Introductionmentioning

confidence: 99%

A Thermopile Device with Sub-Wavelength Hole Arrays by CMOS-MEMS Technology

Chen

Shen

Yeh

2020

Sensors

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A thermopile device with sub-wavelength hole array (SHA) is numerically and experimentally investigated. The infrared absorbance (IRA) effect of SHAs in active area of the thermopile device is clearly analyzed by the finite-difference time-domain (FDTD) method. The prototypes are manufactured by the 0.35 μm 2P4M complementary metal-oxide-semiconductor micro-electro-mechanical-systems (CMOS-MEMS) process in Taiwan semiconductor manufacturing company (TSMC). The measurement results of those prototypes are similar to their simulation results. Based on the simulation technology, more sub-wavelength hole structural effects for IRA of such thermopile device are discussed. It is found from simulation results that the results of SHAs arranged in a hexagonal shape are significantly better than the results of SHAs arranged in a square and the infrared absorption efficiencies (IAEs) of specific asymmetric rectangle and elliptical hole structure arrays are higher than the relatively symmetric square and circular hole structure arrays. The overall best results are respectively up to 3.532 and 3.573 times higher than that without sub-wavelength structure at the target temperature of 60 °C when the minimum structure line width limit of the process is ignored. Obviously, the IRA can be enhanced when the SHAs are considered in active area of the thermopile device and the structural optimization of the SHAs is absolutely necessary.

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Section: Introductionmentioning

confidence: 99%