Research on Linearity Improvement of Silicon-Based p-i-n Diode Limiters

Deng, Shixiong; Gao, Caixia; Chen, Shubin; Sun, Jiyong; Wu, Kang

doi:10.1109/lmwc.2019.2957216

Cited by 23 publications

(12 citation statements)

References 11 publications

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“…The input-power handling capability has been significantly improved, but the FET-based limiter topology is more complicated and needs an extra power supply. 5,6 Benefited from the high breakdown voltage, GaN LNAs with high robustness have attracted great interest, and are widely reported. 7,8 However, the power handling capacity of GaN LNAs is limited at the millimeter-wave band; moreover, the power consumption of GaN LNAs is relatively high.…”

Section: Introductionmentioning

confidence: 99%

“…Mahmoudidaryan and Medi 4 also present a Ka‐band 5‐W limiter‐LNA MMIC, which utilizes FET‐based limiter topology. The input‐power handling capability has been significantly improved, but the FET‐based limiter topology is more complicated and needs an extra power supply 5,6 . Benefited from the high breakdown voltage, GaN LNAs with high robustness have attracted great interest, and are widely reported 7,8 .…”

Section: Introductionmentioning

confidence: 99%

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A compact Ka‐band limiter‐low noise amplifier MMIC with high power capability

Yang

Zhang

Wang

et al. 2022

Micro & Optical Tech Letters

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This paper presents a 30–36 GHz limiter low‐noise amplifier (limiter‐LNA) MMIC for high power and high mobility millimeter‐wave radar systems. The PIN‐diode limiter network and the LNA are codesigned to realize high input‐power handling capability, good small‐signal performance, and small chip area. A two‐state matching capacitor is presented to improve both the input‐power handling capability at the high input‐power level and the input return loss at the small‐signal level. The proposed circuit is fabricated with a combined PIN/0.15‐µm‐GaAs‐pHEMT process. The limiter‐LNA is capable of handling 39 dBm continuous wave (CW) input‐power without failure with only two limiter stages. The measured noise figure is 1.8–2.5 dB, the small‐signal gain is 18.5 ± 0.5 dB, the output power at 1 dB compression point is larger than 11 dBm, and the dc power consumption is 72 mW. The chip area, including testing pads, is only 2.1 mm × 1.0 mm. This limiter‐LNA MMIC is believed to have the highest input‐power handling capability and smallest chip area among limiter‐LNA MMICs at this frequency range reported up to date.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A compact Ka‐band limiter‐low noise amplifier MMIC with high power capability

Yang

Zhang

Wang

et al. 2022

Micro & Optical Tech Letters

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“…Receiver protectors (RPs) are widely used to provide protection to radio frequency (RF) and microwave receivers and components, such as low noise amplifiers (LNAs) [1,2] and analog-to-digital converters (ADCs) [3,4]. An RP allows input power below a certain value to pass through ideally without loss, and attenuating input signal strength when it exceeds the threshold.…”

Section: Introductionmentioning

confidence: 99%

“…An RP allows input power below a certain value to pass through ideally without loss, and attenuating input signal strength when it exceeds the threshold. A number of device technologies have been developed to achieve RF and microwave RPs, including Schottky barrier diodes (SBDs) [5][6][7], p-i-n diodes [3,8,9], and transistors [10][11][12]. Employing a steep-mesa technology, a gallium nitride (GaN) SBD based RP demonstrated a low on-resistance (R ON ) and a power compression of 3.3 dB with a corresponding input power of 20 dBm at 2 GHz [7].…”

Section: Introductionmentioning

confidence: 99%

Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection

Song

Guo

et al. 2022

Electronics

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This paper reports a high-performance microwave receiver protector (RP) based on a single gallium nitride (GaN) high electron mobility transistor (HEMT) at an operation frequency of 30 to 3000 MHz. The HEMT-based RP exhibits multi features: high power compression, constant output power, tunable threshold power level, and insensitivity to frequency variation. With a low drain voltage (Vds) of 3 V, constant output power of 9.9 dBm was acquired for input power over its threshold power of 3.2 dBm. Power compression of 13.3 dB was achieved at the input power of Pin = 20 dBm. In addition, adjustable threshold power level Pth could be obtained by merely tuning drain voltage. Transducer gain measurement results were employed to explain the occurrence of output power saturation. Relatively higher Pth was linked to wider gate voltage swing which extended the linear region of the Pout-Pin characteristic. In addition, the GaN HEMT’s power compression capability shows great immunity to frequency variation, which is promising for protecting sensitive receiver components at both low and high frequencies. Finally, the phase shift of the GaN HEMT RP at high input power was measured and analyzed by the nonlinear behaviors of input capacitance Cgs.

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“…Many studies have been carried out on Si-based diode limiters in recent years [5][6][7]; however, they showed scant room for further improvement as the silicon reached its theoretical limitations. Gallium nitride (GaN) has the superior material properties of high electron saturation velocity, high electrical field strength, and high operating temperature [8,9], which makes it well suited for high-power microwave limiter applications.…”

Section: Introductionmentioning

confidence: 99%

First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

et al. 2021

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Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) and its demonstration in a microwave power limiter for the first time. The fabricated SBD achieved a very low differential specific on-resistance (RON,sp) of 0.21 mΩ·cm2, attributed to the steep-mesa technology, which assists in reducing the spacing between the edge of the anode and cathode to 2 μm. Meanwhile, a low leakage current of ~10−9 A/cm2@−10 V, a high forward current density of 9.4 kA/cm2 at 3 V in DC, and an ideality factor of 1.04 were achieved. Scattering parameter measurements showed that the insertion loss (S21) was lower than −3 dB until 3 GHz. In addition, a microwave power limiter circuit with two anti-parallel diodes was built and measured on an alumina substrate. The input power level reached 40 dBm (10 watts) in continuous-wave mode at 2 GHz, with a corresponding leakage power of 27.2 dBm (0.5 watts) at the output port of the limiter, exhibiting the great potential of GaN SBD in microwave power limiters.

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Research on Linearity Improvement of Silicon-Based p-i-n Diode Limiters

Cited by 23 publications

References 11 publications

A compact Ka‐band limiter‐low noise amplifier MMIC with high power capability

A compact Ka‐band limiter‐low noise amplifier MMIC with high power capability

Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection

First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

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