2017
DOI: 10.1007/s10853-017-1394-x
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Research on quantum efficiency and photoemission characteristics of exponential-doping GaN nanowire photocathode

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Cited by 46 publications
(18 citation statements)
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“…Therefore, we only consider carrier concentration distribution in the x ‐ z plane. We suppose that electrical parameters of GaN nanowire are consistent with the bulk GaN material . The effects of temperature on mobility, diffusion coefficient, electron lifetime, and space charge are not considered .…”
Section: Model and Derivationmentioning
confidence: 99%
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“…Therefore, we only consider carrier concentration distribution in the x ‐ z plane. We suppose that electrical parameters of GaN nanowire are consistent with the bulk GaN material . The effects of temperature on mobility, diffusion coefficient, electron lifetime, and space charge are not considered .…”
Section: Model and Derivationmentioning
confidence: 99%
“…The effects of temperature on mobility, diffusion coefficient, electron lifetime, and space charge are not considered . In addition, the effects of quantum and size have also been ignored …”
Section: Model and Derivationmentioning
confidence: 99%
See 3 more Smart Citations