Research on Synthesis Procedures for Intermediates Required for High Temperature Stable Polymeric Materials

Abstract

When Government drawings, specifications, or other data are used for any purpose other than in connection with a definitely related Government procurement operation, the United States Government thereby incurs no responsibility nor any obligation whatsoever; and the fact that the government may have formulated, furnished, or in any way supplied the said drawings, specifications, or other data, is not to be regarded by implication or otherwise as in any manner licensing the holder or any other person or corporation, or conveying any rights or permission to manufacture, use, or sell any patented invention that may in any way be related thereto. Copies of this report should not be returned unless return is required by security considerations, contractual obligations, or notice on a specific document.

Acoustics and gas discharges: applications to loudspeakers

“…Tests in our laboratory show that this possibility is not only theoretical but it seems that it has not yet been applied industrially. Note that a thermoionic diode has been used as a sensitive and inexpensive detector in low-pressure gas (Dayton er a1 1963, Cooper andTripp 1971). 7.3.2.…”

Growth Mechanism for Germanium Deposition near a SiO[sub 2]-Ge Boundary

“…A number of investigators (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14) have studied the selective epitaxial deposition of silicon, germanium, and gallium arsenide through holes in thin SiO2 masks. In some cases (6,7,8,12) an enhanced growth or "ridge" on the otherwise planar Si epitaxy has been observed immediately adjacent to the edge of the SiO2 mask.…”

“…A number of investigators (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14) have studied the selective epitaxial deposition of silicon, germanium, and gallium arsenide through holes in thin SiO2 masks. In some cases (6,7,8,12) an enhanced growth or "ridge" on the otherwise planar Si epitaxy has been observed immediately adjacent to the edge of the SiO2 mask. In attempting to prepare such structures for epitaxial depositions by either vapor phase or liquid etching, sometimes an enhanced etching or trough formation has been found in the semiconductor surface just at the edge of the mask (5,(7)(8)(9).…”

“…In some cases (6,7,8,12) an enhanced growth or "ridge" on the otherwise planar Si epitaxy has been observed immediately adjacent to the edge of the SiO2 mask. In attempting to prepare such structures for epitaxial depositions by either vapor phase or liquid etching, sometimes an enhanced etching or trough formation has been found in the semiconductor surface just at the edge of the mask (5,(7)(8)(9).…”

“…The ridge growth has not been studied in detail partly because of the prevalence of Si nucleation on the oxide. It has been reported, however, that the ridge growth could be reduced by using narrow oxide windows (7), or by lowering the temperature or reactant concentration (12). Alexander and Runyan (5) and Schnable et al (7) showed that the reaction of Si and SiO2 in the presence of H2 (or HzO) explains in part the trough formation above 1250~ Oldham and Holmstrom (8) assumed that both ridge and trough formations are due to enhanced reactant concentrations and hence enhanced growth and etching rates at the edges of the holes.…”