“…Unsurprisingly, 2D Fe 3 X(X=Ge and Ga)Te 2 has become a rising star in spintronic applications, and a small writing current has been achieved in Fe 3 X(X=Ge and Ga)Te 2 -based devices, which are energy-efficient. [35][36][37] Despite many reviews 20,[38][39][40][41][42][43][44][45][46][47] on 2D vdW magnets, little effort has been put into reviewing the recent progress on Fe 3 X(X=Ge and Ga)Te 2 and its vdW heterostructures (vdWHs). Herein, an overview of the recent advancements in novel findings related to Fe 3 X(X=Ge and Ga)Te 2 and their vdWHs is strategically summarized by introducing fabrication methods and fundamental physical properties, presenting promising applications associated with critical effects, such as the exchange bias (EB) effect, magnetoresistance (MR) effect, spin-orbit torque (SOT) effect, magnetic proximity effect and Dzyaloshinskii-Moriya interaction, and revealing underlying mechanisms (Fig.…”