2006
DOI: 10.1007/s00340-006-2481-x
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Resist-assisted atom lithography with group III elements

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Cited by 2 publications
(3 citation statements)
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“…28 Findings of surface charge densities around 1.5 Â 10 15 cm À2 or even 10 16 cm À2 for monovalent ammonium cations are based on calculations considering the geometric surface area of rough substrates rather than on their active surface area, since monolayer densities do not exceed 5 Â 10 14 atoms cm À2 , even of unbranched nonanethiols on gold. 31,32 The present study aims to achieve a more profound understanding about material-related properties governing a contact-killing ability from the interaction between bacteria and substrates containing quaternary ammonium species by assessing dynamic effects in the bacteria/QAC interface. Properties of silane-based layers and their mechanism of immobilization need to be explored to devise deposition processes and exploit their versatility for surface modication.…”
Section: Introductionmentioning
confidence: 99%
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“…28 Findings of surface charge densities around 1.5 Â 10 15 cm À2 or even 10 16 cm À2 for monovalent ammonium cations are based on calculations considering the geometric surface area of rough substrates rather than on their active surface area, since monolayer densities do not exceed 5 Â 10 14 atoms cm À2 , even of unbranched nonanethiols on gold. 31,32 The present study aims to achieve a more profound understanding about material-related properties governing a contact-killing ability from the interaction between bacteria and substrates containing quaternary ammonium species by assessing dynamic effects in the bacteria/QAC interface. Properties of silane-based layers and their mechanism of immobilization need to be explored to devise deposition processes and exploit their versatility for surface modication.…”
Section: Introductionmentioning
confidence: 99%
“… 28 Findings of surface charge densities around 1.5 × 10 15 cm −2 or even 10 16 cm −2 for monovalent ammonium cations are based on calculations considering the geometric surface area of rough substrates rather than on their active surface area, since monolayer densities do not exceed 5 × 10 14 atoms cm −2 , even of unbranched nonanethiols on gold. 31,32 …”
Section: Introductionmentioning
confidence: 99%
“…We have carried out a similar analysis for Ga atom (both 69 Ga and 71 Ga isotopes; I = 3/2), a member of the same group III of the periodic table as Al. Cooling of this atom is pursued in atomic nanofabrication [17,18]. The clock transition is between the hyperfine structure components F = 1 and F = 2 of the 4p 1/2 ground state, and has been measured to be 2.6779875 (10) GHz and 3.4026946(13) GHz for 69 Ga and 71 Ga, respectively [19].…”
mentioning
confidence: 99%