Resist outgassing characterization for qualification in high power EUV lithography

Takahashi, T.; Sugie, Norihiko; Katayama, Kazuhiro; Takagi, Isamu; Kikuchi, Yukiko; Shiobara, Eishi; Tanaka, Hiroyuki; Inoue, Soichi; Watanabe, Takeo; Harada, Tetsuo; Kinoshita, Hiroo

doi:10.1117/12.916347

Cited by 10 publications

(12 citation statements)

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“…[24][25][26][134][135][136][137] However, they need special consideration in EUVL where exposure tool systems are kept under significantly clean high-vacuum conditions to maintain a high EUV light intensity at the wafer surface. Thus, intensity loss due to optics contamination from resist outgassing needs to be minimized or eliminated.…”

Section: Resist Outgassingmentioning

confidence: 99%

“…However, owing to cost and availability issues, alternative light sources such as electron beam (EB) and low-power EUV have been proposed. [24][25][26]137) There is a consensus between device manufacturers and resist material suppliers involved in EUVL to utilize WS testing. [24][25][26]137) However, other analysis methods such as quadropole mass spectrometry (QMS), gas chromatographymass spectrometry (GC-MS), and pressure-rise tests continue to be applied for the unique advantages they provide.…”

Section: Resist Outgassingmentioning

confidence: 99%

“…[24][25][26]137) There is a consensus between device manufacturers and resist material suppliers involved in EUVL to utilize WS testing. [24][25][26]137) However, other analysis methods such as quadropole mass spectrometry (QMS), gas chromatographymass spectrometry (GC-MS), and pressure-rise tests continue to be applied for the unique advantages they provide. 135,136) For example, GC-MS is the most effective in qualitative analysis of the released resist outgassing species.…”

Section: Resist Outgassingmentioning

confidence: 99%

“…Preliminary work on the effect of these light sources on the resulting chemical phenomena, depending on resist material composition, has also been reported. 24) The rapid advancement of fundamental research on resist outgassing continues to shed light on this issue. [24][25][26] New clues on how to minimize optics contamination from the viewpoint of resist platform design have also been found.…”

Section: Resist Outgassingmentioning

confidence: 99%

“…[20][21][22][23] Lastly, fundamental research activities on another EUVL issue resist outgassing, is presented. [24][25][26] 2. Trade-off Relationship Figure 1 shows the typical dependences of the line width (LW) and LER on exposure dose and half-pitch (nominal LW).…”

Section: Introductionmentioning

confidence: 99%

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Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

166

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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Section: Resist Outgassingmentioning

confidence: 99%

Section: Resist Outgassingmentioning

confidence: 99%

Section: Resist Outgassingmentioning

confidence: 99%

Section: Resist Outgassingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

166

153

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Outgassing analysis of molecular glass photoresists under EUV irradiation

Chen

Yuan

et al. 2014

Sci. China Chem.

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Contribution of EUV resist components to the non-cleanable contaminations

Shiobara¹,

Takahashi²,

Sugie³

et al. 2014

SPIE Proceedings

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The suppression of outgassing from extreme ultraviolet (EUV) resist needs to be addressed for realizing EUV lithography (EUVL) because outgassing is likely the main contributor to the contamination of mirror optics in EUV scanners, which results in reflectivity loss. Resist outgassing causes two types of contamination: cleanable contamination, involving hydrocarbon contaminants, and noncleanable contamination, involving noncarbon components. The relation of cleanable contamination between EUV-and electron beam (EB)-based evaluations is linear. However, the relation of noncleanable contamination is not clear. In this study, we investigated the contribution of EUV resist components to noncleanable contamination using different photoacid generator components. The cleanability of noncleanable elements (sulfur, iodine, chlorine, and bromine) in contamination films was measured and compared for the EUV-and EB-based outgas testers. The result suggested that the chlorine and bromine contaminants were completely removed after cleaning. On the other hand, sulfur and iodine remained even after cleaning. This suggested that the careful use of iodine in resist materials is necessary due to its high photoabsorption and low cleanability. In addition, the cleaning rate and noncleanability of contaminants in the EUV-based test were larger than in the EB-based test. This suggests that the contamination film in the EUV-based test is more porous than that in the EB-based test.

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Resist outgassing characterization for qualification in high power EUV lithography

Cited by 10 publications

References 0 publications

Resist Materials and Processes for Extreme Ultraviolet Lithography

Resist Materials and Processes for Extreme Ultraviolet Lithography

Outgassing analysis of molecular glass photoresists under EUV irradiation

Contribution of EUV resist components to the non-cleanable contaminations

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