Resist Removal by using Atomic Hydrogen

Horibe, Hideo; Yamamoto, Masashi; Kusano, Eiji; Ichikawa, Tomokazu; Tagawa, Seiichi

doi:10.2494/photopolymer.21.293

Cited by 36 publications

(26 citation statements)

References 15 publications

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“…Also, oxygen plasma ashing may cause oxidation of substrates and metal wiring because this process requires high temperature (above 250°C) [5,6]. Therefore, several resist removal methods have been developed (e.g., atomic hydrogen [7][8][9][10], UV/ozone [11,12]). …”

Section: Introductionmentioning

confidence: 99%

Analysis of Resist Removal Phenomenon Using Laser Irradiation

Kamimura

Kuramae

Yamashiro

et al. 2017

J. Photopol. Sci. Technol.

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Resist removal phenomenon with laser irradiation was analyzed by using a finite element (FE) method. Laser irradiation in the water can improve the resist removal effect as compared with that of normal atmosphere irradiation. A two-dimensional (2-D) micro-FE model was constructed based on the boundary surface between the Si wafer, resist and water during laser radiation. In the normal atmosphere, any effective stress did not occur along the x-axis direction in the resist. In contrast, for the laser irradiation in the water, large compressive stress was confirmed along the x-axis direction in the resist. This compressive stress in the resist is thought to improve the resist removal efficiency.

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Section: Introductionmentioning

confidence: 99%

Analysis of Resist Removal Phenomenon Using Laser Irradiation

Kamimura

Kuramae

Yamashiro

et al. 2017

J. Photopol. Sci. Technol.

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“…Also, oxygen plasma ashing may cause oxidation of substrates and metal wiring because this process requires high temperature (above 250 °C) [5,6]. Therefore, several resist removal methods have been developed (e.g., atomic hydrogen [7][8][9][10], UV/ozone [11,12]). …”

Section: Introductionmentioning

confidence: 99%

Removal Technology of Poly-Vinyl Phenol Using Laser Irradiation

Kamimura

Nuno

Kuroki

et al. 2016

J. Photopol. Sci. Technol.

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Removal by using laser irradiation was investigated in Poly-Vinyl Phenol (PVP). The laser irradiation in the water can improve the PVP stripping effect as compared with that of normal atmosphere irradiation. The surface laser damage threshold of Si wafer was 0.13 J/cm 2 , and the PVP stripping threshold was 0.06 J/cm 2 . The PVP stripping threshold decreased to approximately 50 % of the surface laser damage threshold. The PVP strips from the Si wafer just as shown in a positive-tone DNQ / novolak resist. However, removal efficiency decreased at a large irradiation beam diameter. The stripped area decreases at the beam diameter of 1.5mm or more. Irradiation with multiple laser beams with a small beam diameter could improve the PVP stripping rate with high efficiency.

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“…On the other hands, we previously demonstrated the photoresist removal method by using atomic hydrogen generated by a tungsten hot-wire catalyst [3][4][5]. The atomic hydrogen has excellent ability to decompose photoresists and was easily generated by decomposing molecular hydrogen on metal hot-wire catalyst [6,7].…”

Section: Introductionmentioning

confidence: 99%