Resist thickness influence on depth of focus - A key question for advanced i-line and DUV lithography

Boettiger, U.; Fischer, Thomas; Grassmann, Andreas; Moritz, H.; Reuhman-Huisken, Marijan E.

doi:10.1016/0167-9317(94)90128-7

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…On the other hand, the CD variation for line/space ϭ375/450 nm patterns ͑825 nm pitch͒ showed a less pronounced swing curve type dependency on resist thickness with a similar /2n period, as shown in Fig. 4,11 Simulation results of defocus as a function of aerial image contrast as shown in Fig. Similar swing curve type dependencies on resist thickness with similar /2n periods were also found for the maximum DOF range and the centered focus position as shown in Figs The maximum DOF ranges observed experimentally could not be predicted well by conventional or modified Rayleigh equations.…”

Section: Resultsmentioning

confidence: 92%

“…4 On the other hand, a bottom antireflective coating ͑ARC͒ layer has been broadly utilized in the development of advanced deep UV lithography in recent years, in order to efficiently reduce the swing curve effect. This so-called ''swing curve'' effect becomes a matter of concern, in particular when patterning sub-half-micron structures over highly reflective substrates, which is a situation faced in deep ͑UV͒ lithography.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of thin film interference on process latitude in deep ultraviolet lithography

Azuma¹,

Satô²,

Aochi³

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inThree-dimensional electron-beam lithography using an all-dry resist process A heavy ion implanted pocket 0.10 μm n-type metal-oxide-semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process Silicon metal-oxide-semiconductor field-effect transistor with gate structures defined by scanned probe lithography J. FIG. 2. Simulation result of normalized absorption of illumination light in resist as a function of resist thickness ͑NAϭ0.5 and ϭ0.6͒. FIG. 3. CD variations ͑space widths͒ of ͑a͒ line/spaceϭ250/300 nm patterns ͑550 nm pitch͒ at dose/focusϭ19 mJ/cm 2 /0.1 m and ͑b͒ line/spaceϭ375/450 nm patterns ͑825 nm pitch͒ at dose/focusϭ17 mJ/cm 2 /Ϫ0.2 m as a function of resist thickness. 2929 Azuma, Sato, and Aochi: Effect of thin film interference 2929 JVST B -Microelectronics and Nanometer Structures Redistribution subject to AVS license or copyright; see http://scitation.aip.org/termsconditions. Download

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Section: Resultsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Effect of thin film interference on process latitude in deep ultraviolet lithography

Azuma¹,

Satô²,

Aochi³

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…[5][6][7] The obtainable feature sizes that can be produced with a resist material depend critically on the required thickness of a resist. Besides the numerical aperture of the illumination system and the used wavelength of the light, the depth of focus (DOF) plays an important role for the obtainable resolution of the photolithographic process which is described by the modified Rayleigh equation: 8,9 DOF ¼ l…”

Section: Stephanie Hoeppenermentioning

confidence: 99%

Fabrication of patterned silane based self-assembled monolayers by photolithography and surface reactions on silicon-oxide substrates

2010

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Self-assembled monolayers (SAMs) have received increasing attention since their introduction 30 years ago. Soon it was discovered that they can be used as alternative resist materials and are compatible with different established lithographic techniques commonly used in silicon semiconductor technology. Besides these possibilities to structure SAMs, other attractive properties emerged from the use of SAMs. E.g., the introduction of addressability into the patterns by selective functionalization with reactive precursor molecules and/or by applying suitable surface reactions was established. In this feature we highlight developments of photolithographic techniques that have been used in combination with SAMs serving either as resists for the patterning process or as precursor molecules for surface reactions, which can be performed on non-structured and mainly photochemically structured surfaces to obtain multifunctional surfaces with tunable surface properties. The aim is to provide an overview about the versatile possibilities to use silane based SAM systems to structure silicon-oxide substrates by introducing topographical as well as chemically heterogeneous surface structures. In particular the chemical activation of SAMs includes a large number of functionalization concepts which are intended to be summarized in this review. They will be introduced here according to the class of chemical reaction that has been used. Therefore, an introduction into the plethora of possible structures, which have been created by the combination of photolithographic structuring approaches, and the integration of tailor made surface functionalities into these systems will be highlighted. Additionally effective strategies to implement a diversity of chemical functionalities onto one substrate are summarized.

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Photolithography

Leuschner

Pawlowski²

2013

Materials Science and Technology

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The sections in this article are Introduction Exposure Tools Image Formation and Resolution Contact and Proximity Printing Optical Mask Aligner X‐Ray Stepper Projection Printing Near UV Projection Systems Deep UV Projection Systems Nonconventional UV Lithography Post‐Optical Lithography Photoresist Processing Quality Control and Resist Deposition Purity and Storage Stability Resist Coating Resist Exposure and Development Characteristic Curve and Standing Wave Effects Process Latitudes Dissolution Rate and Development Methods Pattern Inspection and Resist Profile Simulation Etching, Resist Stripping and Planarization Photoresists Principles of Photoresist Chemistry Negative‐Tone Resists Photocrossslinking Via Azides Free‐Radical‐Initiated Polymerization Acid‐Catalyzed Crosslinking Positive‐Tone Resists Dissolution Inhibition/Dissolution Promotion Acid‐Catalyzed Deblocking Polymer Degradation Solvents for Photoresists and Main Resist Suppliers Special Photoresist Techniques Nonconventional Diazo Resist Processes Resist Profile Modification and Image Reversal Bilayer Systems for Contrast Enhancement Suppression of Reflections and Standing Wave Effects Dyed Resists Antireflective Layers Silicon‐Containing Multilayer Resists Negative‐Tone Silicon Bilayer Resists Positive‐Tone Silicon Bilayer Resists Top Surface Imaging Gas Phase Silylation Systems Liquid Phase Silylation Systems Trends in Photolithography

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Resist thickness influence on depth of focus - A key question for advanced i-line and DUV lithography

Cited by 5 publications

References 2 publications

Effect of thin film interference on process latitude in deep ultraviolet lithography

Effect of thin film interference on process latitude in deep ultraviolet lithography

Fabrication of patterned silane based self-assembled monolayers by photolithography and surface reactions on silicon-oxide substrates

Photolithography

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