Resistance dependence of detected signals of MOM diodes

Abstract

The detection characteristics of point-contact W-Ni diodes at 10 MHz, 9.5 GHz, and 28.3 THz are investigated as a function of diode resistance (contact pressure). The experimental results are compared with predictions from tunneling theory taking into account circuit parameters. Good agreement is obtained when the relaxation behavior of the metallic whisker antenna is considered at infrared wavelengths.

Infrared laser detection by antenna‐coupled point‐contact schottky diodes

“…Hence Rs can be obtained by s u b s t i t u ting Ig' and I a t l a r g e dc b i a s v o l t a g e t o Eq. (17). Then I ' and I" are obtained by s u b s t i t u t i n g t h e s e v a l u e s i n t o Eqs.…”

Antenna length and polarization response of antenna-coupled MOM diode infrared detectors

“…The first devices of this kind, based on point-contact or catwhisker diodes, were introduced in the 1960s and were capable of functioning as infrared detectors [1,2]. The advancement of lithographic technologies allowed thin-film antenna-coupled diodes to be fabricated [3,4] in a more reliable and repeatable fashion.…”

Antenna-coupled thin-film far-infrared radiation detectors

“…"an +Pdfl Psn =P0 (1) x d Snell's law is satisfied between the angle of incidence (e') and the angle of refraction (Os). °d is the propagation angle of the surface wave mode, and the rays incident at an angle larger than the critical angle are completely reflected at the interface between the dielectric substrate and the air, and trapped in the dielectric substrate as surface wave mode.…”