Resistance Electric Field Dependence and Time Drift of Piezoresistive Single Crystalline Silicon Nanofilms

Anderås, Emil; Vestling, Lars; Olsson, Jörgen; Katardjiev, Ilia

doi:10.1016/j.proche.2009.07.020

Cited by 8 publications

(7 citation statements)

References 2 publications

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“…2, this is not necessarily valid for depleted silicon structures that, as will be seen below, are sensitive to surface charging. Similar dynamic changes in the resistance of silicon nanowires have been previously reported [3,8,[18][19][20].…”

supporting

confidence: 84%

“…A recent example is giant piezoresistance (PZR) [1], where the change in resistance of silicon nanowires due to an applied mechanical stress was reported to be orders of magnitude larger than that of bulk silicon [2]. This report is highly cited [3][4][5][6][7][8] in part because it may represent another example of the effect of size on the physical properties of an otherwise well characterized material [3,9,10]. Additionally, giant PZR is currently seen as a potential breakthrough means of detecting motion in nano-electromechanical systems [5] where conventional detection methods lose sensitivity [4,11,12].…”

mentioning

confidence: 99%

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Giant Piezoresistance Effects in Silicon Nanowires and Microwires

et al. 2010

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The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of depleted silicon nano- and microstructures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces independent of the applied stress. Importantly, this time-varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.

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confidence: 84%

mentioning

confidence: 99%

Giant Piezoresistance Effects in Silicon Nanowires and Microwires

et al. 2010

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“…There are no known Silicon surface states that possess this property 63,64,65 . A more likely explanation for the observed resistance change is simply a non-stress-related surface charge relaxation 48,67 . With reference to Figure 3(c) in Ref.…”

Section: Subsection 31: Effect Of Electrostatic Depletionmentioning

confidence: 99%

Piezoresistance in silicon and its nanostructures

Rowe

2014

J. Mater. Res.

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“…The modulation by the electrical field can be clearly observed. On the contrary, the shield layer minimizes the impact of the electrical field on piezoresistors as shown in Figure 5 b. Anderås observed this phenomenon in single crystalline silicon nanofilms [ 19 ]. It is reported that the interface of the oxide and silicon is in inversion when the metal gate is applied to an appropriate voltage.…”

Section: Electrical Field Stability Simulationmentioning

confidence: 99%

A Micromachined Piezoresistive Pressure Sensor with a Shield Layer

Cao

Wang

et al. 2016

Sensors

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This paper presents a piezoresistive pressure sensor with a shield layer for improved stability. Compared with the conventional piezoresistive pressure sensors, the new one reported in this paper has an n-type shield layer that covers p-type piezoresistors. This shield layer aims to minimize the impact of electrical field and reduce the temperature sensitivity of piezoresistors. The proposed sensors have been successfully fabricated by bulk-micromachining techniques. A sensitivity of 0.022 mV/V/kPa and a maximum non-linearity of 0.085% FS are obtained in a pressure range of 1 MPa. After numerical simulation, the role of the shield layer has been experimentally investigated. It is demonstrated that the shield layer is able to reduce the drift caused by electrical field and ambient temperature variation.

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Resistance Electric Field Dependence and Time Drift of Piezoresistive Single Crystalline Silicon Nanofilms

Cited by 8 publications

References 2 publications

Giant Piezoresistance Effects in Silicon Nanowires and Microwires

Giant Piezoresistance Effects in Silicon Nanowires and Microwires

Piezoresistance in silicon and its nanostructures

A Micromachined Piezoresistive Pressure Sensor with a Shield Layer

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