Resistance of copper nanowires and comparison with carbon nanotube bundles for interconnect applications using first principles calculations

Zhou, Yu; Sreekala, S.; Ajayan, Pulickel M.; Nayak, Saroj K.

doi:10.1088/0953-8984/20/9/095209

Cited by 69 publications

(41 citation statements)

References 29 publications

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“…20 The set and reset voltages of the metallic switching can be higher than those of the ionic switching, since the formation of the metallic filament might require a higher electric field or voltage than the ionic SCLC filament. 15,16 During the reset process, the rupture of the metallic filament is generally due to local heating 10,16,[21][22][23] with no polarity, which is consistent with the nonpolar RESET1 or RESET3 operations in Fig. 2͑b͒.…”

Section: Multilevel Resistive Switching With Ionic and Metallic Filamsupporting

confidence: 65%

Multilevel resistive switching with ionic and metallic filaments

Liu

Abid

Wang

et al. 2009

Applied Physics Letters

157

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Articles you may be interested inResistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices J. Vac. Sci. Technol. A 32, 061505 (2014); 10.1116/1.4896329 Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism J. Appl. Phys. 111, 014505 (2012); 10.1063/1.3674322Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories

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Section: Multilevel Resistive Switching With Ionic and Metallic Filamsupporting

confidence: 65%

Multilevel resistive switching with ionic and metallic filaments

Liu

Abid

Wang

et al. 2009

Applied Physics Letters

157

View full text Add to dashboard Cite

show abstract

“…Along the longitudinal axis, the lattice exhibits translational symmetry and is long enough to consider the longitudinal electron wavenumber as a continuous value. Such type of energy spectrum may be evaluated by means of the tight-binding approximation (e.g., CNTs, [30]), or first principle calculations (e.g., copper NWs, [31]). …”

Section: A Modeling Nanoscale Interconnectsmentioning

confidence: 99%

Nanoscale Electromagnetic Compatibility: Quantum Coupling and Matching in Nanocircuits

Slepyan¹,

Boag²,

Mordachev³

et al. 2015

IEEE Trans. Electromagn. Compat.

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Abstract-The paper investigates two typical electromagnetic compatibility (EMC) problems, namely, coupling and matching in nanoscale circuits composed of nano-interconnects and quantum devices in entangled state. Nano-interconnects under consideration are implemented by using carbon nanotubes or metallic nanowires, while quantum devices -by semiconductor quantum dots. Equivalent circuits of such nanocircuits contain additional elements arising at nanoscale due to quantum effects. As a result, the notions of coupling and impedance matching are reconsidered. Two examples are studied: in the first one, electromagnetically coupled nanowires are connected to classical lumped devices; in the second one, electromagnetically uncoupled transmission lines are terminated on quantum devices in entangled states. In both circuits the EMC features qualitatively and quantitatively differ from their classical analogs. In the second example, we demonstrate the existence of quantum coupling, due to the entanglement, which exists in spite of the absence of classical electromagnetic coupling. The entanglement also modifies the matching condition introducing a dependence of the optimal value of load impedance on the line length.Index Terms -Electromagnetic compatibility, kinetic inductance, nano-circuits, nano-electromagnetism, quantum devices, quantum entanglement. I. INTRODUCTIONODAY's achievements of nanoelectronics allow utilization and manipulation of small collections of atoms and molecules, such as semiconductor heterostructures, quantum wells, quantum wires and quantum dots [1][2][3] radiation with quantum mechanical low-dimensional systems.One of the crucial aspects of electromagnetism for electronic devices and systems is related to their electromagnetic compatibility, i.e., of their ability to operate successfully, with controlled levels of emissions and with a suitable degree of robustness to unwanted electromagnetic couplings via various mechanisms of interference [12][13][14].However, with the transition of electronics to nanoscale new physical phenomena as well as new materials' properties need to be studied. Quantum effects, such as: discrete energy spectrum of charge carriers, existence of phonons, ballistic transport and tunneling, many-body correlations, interface effects, and so on, manifest themselves jointly with classical electromagnetic interactions [15][16]. As a result, the classical design based on the phenomenological separate analysis of physical properties of electric circuit elements and functional properties of devices and systems becomes invalid with respect to nanoelectronics. These considerations lead to the conclusion that the "classical" EMC, completely based on macroscopic electrodynamics, must be deeply revised starting from the basic concepts and opening the era of "nanoEMC" [17][18][19].For instance, the classical scaling rules used to design integrated circuits (ICs) and to implement EMC solutions are based on the macroscopic behavior of the electrical parameters, such as inductances and capa...

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“…As the total number of quantum conduction channels in parallel (N qc ) increases lin-early with the cross-section area of a conductor [44], then C q ∝ N qc under some assumptions [45], C q ∝ d 2 for high aspect ratio conductors (d is the characteristic diametrical size) and δ qC for cylinder-like nano-conductors is δ qC ∝ d. (15) So, unique possibility for significant increase of δ qC in carbon electrodes is the application of nanostructures with extended dimensionality, e.g. bundles of metallic SWCNTs instead of 1D nanowires.…”

Section: Quantum Capacitance Of Advanced Carbon Electrode Nanostructuresmentioning

confidence: 99%

“…Advanced carbon nanostructures are considered [43][44][45]50] as a future of nanoelectronics beyond 22-nm technology node (2016). Micron-sized carbon-based integrated on chip nanoionic SCs [1,5] as well as the surface mount high-capacity SCs [6,51] for portable electronics may be well compatible with future nanoelectronics technologies.…”

Section: Quantum Capacitance Of Advanced Carbon Electrode Nanostructuresmentioning

confidence: 99%

Electrode Nanostructures for Advanced Supercapacitors

Despotuli

Андреева

2011

Acta Phys. Pol. A

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The ultimate physical limit approach is applied to the case of electrode nanostructures of double electric layer (DEL) supercapacitors (SCs) on the basis of advanced superionic conductors (AdSIC) required for the development of many high-tech directions. New nanoionic fundamentals (notion, criteria and estimations) are introduced and the ways for the creation of advanced carbon-based nanostructures suited for different types of SCs are proposed.

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Resistance of copper nanowires and comparison with carbon nanotube bundles for interconnect applications using first principles calculations

Cited by 69 publications

References 29 publications

Multilevel resistive switching with ionic and metallic filaments

Multilevel resistive switching with ionic and metallic filaments

Nanoscale Electromagnetic Compatibility: Quantum Coupling and Matching in Nanocircuits

Electrode Nanostructures for Advanced Supercapacitors

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