Resistance oscillations of two-dimensional electrons in crossed electric and tilted magnetic fields

Mayer, William; Vitkalov, Sergey; Быков, А. А.

doi:10.1103/physrevb.93.245436

Cited by 7 publications

(3 citation statements)

References 50 publications

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“…We note that the studied systems demonstrate a significant magnitude of impurity backscattering. [50][51][52] Fig. 8(a) presents the dependence of the averaged square of the matrix elements on the shape of the impurity potential V (x, y) at η ≈ 0.11.…”

Section: Spin-orbit Interaction and Quantum Positivementioning

confidence: 99%

Positive quantum magnetoresistance in tilted magnetic field

et al. 2016

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Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer. Application of in-plane magnetic field produces a dramatic decrease of the QPMR. This decrease correlates strongly with the reduction of the amplitude of Shubnikov de Haas resistance oscillations due to modification of the electron spectrum via enhanced Zeeman splitting. Surprisingly no quantization of the spectrum is detected when the Zeeman energy exceeds the half of the cyclotron energy suggesting an abrupt transformation of the electron dynamics. Observed angular evolution of QPMR implies strong mixing between spin subbands. Theoretical estimations indicate that in the presence of spin-orbital interaction the elastic impurity scattering provides significant contribution to the spin mixing in GaAs quantum wells at high filling factors.

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Section: Spin-orbit Interaction and Quantum Positivementioning

confidence: 99%

Positive quantum magnetoresistance in tilted magnetic field

et al. 2016

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“…[3] and references therein. Recently, a temperature dependence of MISO amplitude in a quantum well with three populated subbands has been explained by temperature variation of quantum electron lifetime [4], an energy spectrum reconstruction by a parallel magnetic field has been shown to affect MISO strongly [5,6], and the thermoelectric power magnetophonon resonance has been studied in two-subband quantum wells [7].…”

Section: Introductionmentioning

confidence: 99%

Intersubband scattering inn-GaAs/AlGaAs wide quantum wells

Drichko¹,

Smirnov²,

Nestoklon³

et al. 2018

Phys. Rev. B

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Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic scattering between the symmetric and asymmetric subbands formed due to an electrostatic barrier in the center of the quantum well. The tunneling splitting between these subbands as well as the intersubband scattering rate are determined.

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“…We note, however, that an absence of the quantization of the density of states may not be sufficient to eliminate completely quantum mechanical outcomes as has been shown recently. 36 The paper presents an experimental investigation of effects of temperature and a static disorder on both quantum and classical magnetoresistances. In the experiment the static disorder is controlled in-situ and varies continuously.…”

Section: Introductionmentioning

confidence: 99%

Anomalous negative magnetoresistance of two-dimensional electrons

2018

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Effects of temperature T (6K-18K) and variable in-situ static disorder on dissipative resistance of two dimensional electrons are investigated in GaAs quantum wells placed in a perpendicular magnetic field, B ⊥. Quantum contributions to the magnetoresistance, leading to Quantum Positive MagnetoResistance (QPMR), are separated by application of an in-plane magnetic field. QPMR decreases considerably with both the temperature and the static disorder and is in good quantitative agreement with theory. The remaining resistance R decreases with the magnetic field exhibiting an anomalous polynomial dependence on B ⊥ : R(B ⊥) − R(0)) = A(T, τq)B η ⊥ , where the power η ≈1.5±0.1 in a broad range of temperatures and disorder. The disorder is characterized by electron quantum lifetime τq. The scaling factor A(T, τq) ∼ [κ(τq)+β(τq)T 2 ] −1 depends significantly on both τq and T , where the first term κ ∼ τ −1/2 q decreases with τq. The second term is proportional to square of the temperature and diverges with increasing static disorder. Above a critical disorder the anomalous magnetoresistance is absent and only a positive magnetoresistance, exhibiting no distinct polynomial behavior with the magnetic field, is observed. Presented model accounts memory effects and yields η =3/2.

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Resistance oscillations of two-dimensional electrons in crossed electric and tilted magnetic fields

Cited by 7 publications

References 50 publications

Positive quantum magnetoresistance in tilted magnetic field

Positive quantum magnetoresistance in tilted magnetic field

Intersubband scattering inn-GaAs/AlGaAs wide quantum wells

Anomalous negative magnetoresistance of two-dimensional electrons

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