Resistance switching at the nanometre scale in amorphous carbon

Sebastian, Abu; Pauza, Andrew; Rossel, C.; Shelby, R. M.; Rodríguez, A. Fraile; Pozidis, Haralampos; Eleftheriou, Evangelos

doi:10.1088/1367-2630/13/1/013020

Cited by 78 publications

(91 citation statements)

References 28 publications

(44 reference statements)

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“…This behaviour is similar to resistive switching that has been seen in carbon devices before [33]. The proposed switching mechanism in these devices is Joule heating within the nanocrystalline microstrucuture of the DLW region, which produces a conductive filament through annealing [34,35]. The physical effect of the annealing is believed to be clustering and alignment of the sp 2 hybridized sites within the sp 3 matrix of the amorphous carbon along the direction of the applied bias.…”

Section: Resultssupporting

confidence: 67%

Direct laser write process for 3D conductive carbon circuits in polyimide

2017

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Direct laser writing (DLW) is a versatile materials processing technique often applied to device prototyping. However, a fast and cost effective DLW process for fabricating three-dimensional (3D) conductor-insulator composites has yet to be demonstrated. In this work, polyimide (PI) is established as a viable platform for creating 3D graphitic circuits through ultrafast DLW. Under optimized processing conditions, graphitic material with a resistivity of 6 Ω·cm was formed in the laser irradiated regions. A thermal and microstructural material model is proposed for the non-linear DLW process and its graphitic products. The process is demonstrated to be an inexpensive and rapid technique for creating electrical contacts to nanoscale components. Future applications of the technique range from nanowire power generation to 3D integrated photonic and electronic devices.0a The

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Section: Resultssupporting

confidence: 67%

Direct laser write process for 3D conductive carbon circuits in polyimide

2017

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“…After this process, the filament remains in the a-C layer even when the switch is opened. Detailed investigations of the filament-formation process in a-C at the nanoscale, including the field/temperature dependence, had been performed using a conductive-mode AFM [7]. Once the filament has been formed, there is a marked difference in the conduction behavior: metallic transport is observed, and the total resistance of the switch reduces to 15 kΩ.…”

Section: Contact Materials Static Characteristicsmentioning

confidence: 99%

“…The a-C used as a coating has a low surface energy, similar to other carbon-based materials, and it can be deposited with a simple physical sputter-deposition process suitable for full wafer integration. Moreover, Jouleheating-induced clustering of sp 2 hybridized carbon atoms [7] enables current conduction in a localized filament without creating excessive adhesion force, thus enabling NEM relays to operate with a restoring force well below 100 nN.…”

Section: Introductionmentioning

confidence: 99%

Amorphous carbon active contact layer for reliable nanoelectromechanical switches

Grogg

Ayala

Drechsler

et al. 2014

2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)

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This paper reports an amorphous carbon (a-C) contact coating for ultra-low-power curved nanoelectromechanical (NEM) switches. a-C addresses important problems in miniaturization and low-power operation of mechanical relays: i) the surface energy is lower than that of metals, ii) active formation of highly localized a-C conducting filaments offers a way to form nanoscale contacts, and iii) high reliability is achieved through the excellent wear properties of a-C, demonstrated in this paper with more than 100 million hot switching cycles. Finally, a full inverter using a-C contacts is fabricated to demonstrate the viability of the concept.

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“…The possibility of making memory on the base of amorphous carbon is shown in experiment [1]. Present work is directed to simulation of experimentally observed effects.…”

Section: Introductionmentioning

confidence: 98%