Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite

Abstract

In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI2 perovskite film, the Ag/CsPbBrI2/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI2/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI2 perovskite film is uniform and dense, and the Ag/CsPbBrI2/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI2/ITO memory devices based on CsPbBrI2 perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI2 film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.

Synthesis of LaXO3 (X = Fe, Mn, Cr, Ni) Thin Films Using a Simple Spin Coating Set-Up for Resistive Switching Memory Devices

“…Previous studies have shown that as-deposited WO 3 films with lower crystallinity demonstrated a higher resistance ratio [41], while HfO 2 films deposited at higher substrate temperatures exhibited excellent bipolar resistive switching behavior attributed to their larger grain size and higher crystallinity [42]. Moreover, the uniformity and density of the CsPbBrI 2 surface play a role in achieving nonvolatile, reliable, reproducible, and long-term stable resistive switching [43]. Additionally, a decrease in the set/reset operating voltage was observed with a decrease in the thickness of the NiO nanodisk [44].…”

“…Electronics 2023, 12, x FOR PEER REVIEW 13 of 19 and higher crystallinity [42]. Moreover, the uniformity and density of the CsPbBrI surface play a role in achieving non-volatile, reliable, reproducible, and long-term stable resistive switching [43]. Additionally, a decrease in the set/reset operating voltage was observed with a decrease in the thickness of the NiO nanodisk [44].…”

Recent Progress on Boosting the Perovskite Film Quality of All-Inorganic Perovskite Solar Cells

“…The Br − (1.96 Å) and Cl − (1.81 Å) both have a smaller radius than I − (2.2 Å), so some groups have added them into CsPbI 3 . The CsPbI 3 structural stability increased with the bigger t values [9,25,26,[45][46][47][48][49][50][51]. The SCN − ion, a kind of pseudohalide ion, has a smaller radius, which could also strengthen the crystallization behavior of the CsPbI 3 film, and promoted the PCE to 17.03% [52].…”