Resistance switching in HfO2 metal-insulator-metal devices

Gonon, P.; Mougenot, Mathieu; Vallée, C.; Jorel, Corentin; Jousseaume, V.; Grampeix, H.; Kamel, F. El

doi:10.1063/1.3357283

Cited by 119 publications

(80 citation statements)

References 32 publications

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“…No significant dispersion of set and reset voltages has been observed at room temperature. Note that we report here lower voltages but for much thicker films as compared to reported values for HfO 2 film [13]. However, the forming process is not observed in single layer HfO x devices even in higher range of bias voltages as shown in Fig.…”

Section: Contents Lists Available At Sciencedirectcontrasting

confidence: 70%

Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric

Mahapatra

Maji

Horsfall

et al. 2015

Microelectronic Engineering

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Section: Contents Lists Available At Sciencedirectcontrasting

confidence: 70%

Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric

Mahapatra

Maji

Horsfall

et al. 2015

Microelectronic Engineering

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“…Its simple metalinsulator-metal (MIM) structure makes RRAM easy to fabricate and highly scalable. Many binary metal oxides, such as NiO, HfO 2 , TiO 2 , have been proposed as insulator layers for the MIM structure of RRAM devices due to their ease of composition control and fabrication [5][6][7][8][9][10][11][12][13]. HfO 2 is of particular interest due to its compatibility with the conventional ''complementary metal oxide-semiconductor'' (CMOS) manufacturing process [14,15].…”

Section: Introductionmentioning

confidence: 99%

Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy

Lin

Hwang

et al. 2015

Microelectronics Reliability

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“…[4][5][6] Hence, the investigation of the behavior of oxygen vacancies is important for RRAM device performance.…”

Section: 3mentioning

confidence: 99%

“…2,3 During resistive switching in HfO2, a local redox reaction associated with a formation or modification of conducting filaments takes place, in which the movement of oxygen vacancies plays the key role for the modulation of the electric properties. [4][5][6] Hence, the investigation of the behavior of oxygen vacancies is important for RRAM device performance.…”

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confidence: 99%

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Rodenbücher

Hildebrandt

Szot

et al. 2016

Applied Physics Letters

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On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO2-x) contaminated with adsorbates of carbon oxides the formation of hafnium carbide (HfCx) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfCx surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO2 thin films prepared and measured under identical conditions, the formation of HfCx was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating. HfO2 (hafnia) has been studied extensively in the last decades as a high- dielectric being used as replacement of the standard gate dielectric SiO2 in order to produce high-density logic and memory devices.1 Furthermore, it was found that HfO2 can undergo a local insulator-metal (IM) transition under the influence of an electric field opening up the possibility to use it as resistive switching material in redox-based random access memories (RRAM). 2,3During resistive switching in HfO2, a local redox reaction associated with a formation or modification of conducting filaments takes place, in which the movement of oxygen vacancies plays the key role for the modulation of the electric properties. [4][5][6] Hence, the investigation of the behavior of oxygen vacancies is important for RRAM device performance.In contrast to the local insulator-metal transition as observed in conducting filaments in HfO2 on the nanoscale, also a global insulator-metal transition on a macroscopic scale has been found in oxygen deficient hafnium oxide thin films grown by molecular beam epitaxy (MBE). 7,8 The oxygen deficiency in these films is created during growth under oxygen deficient conditions leading to a homogeneous distribution of oxygen vacancies. With increasing amount of oxygen vacancies, the band gap is consistently reduced and defect states inside the gap eventually form a defect band at the Fermi level.7,8 RRAM devices based on these films show forming free resistive switching and the forming voltage is independent on the thickness of the highly oxygen deficient HfO2-x layer. 9,10 In this paper we discuss the reaction of carbon impurities to hafnium carbide and its influence on hafnium oxide-based resistive switching. The role of carbon impurities is of extremely high importance, as they are inherent to most of today's deposition techniques commonly used for fabricating complementary metal oxide semiconductor (CMOS) devices, such as atomic layer deposition (ALD) based on organic precursors. Based on an in-ope...

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Resistance switching in HfO2 metal-insulator-metal devices

Cited by 119 publications

References 32 publications

Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric

Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric

Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

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