Resistive heated MOCVD deposition of InN films

Hwang, Jennie S.; Lee, Chung-Han; Yang, Fuh-Hsiang; Chen, Kuei‐Hsien; Hwa, Luu–Gen; Yang, Yao‐Joe; Chen, Li‐Chyong

doi:10.1016/s0254-0584(01)00455-2

Cited by 15 publications

(3 citation statements)

References 28 publications

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“…These results were consistent with the reported values for films grown by sputtering [25] and MBE [26]. It should be noted that the PL measurement at 1.9 eV is rarely reported in the literature [23,[25][26][27][28]. This is because of the inherent process difficulties caused by the low dissociation temperature of the material; therefore, the InN sample usually contains extremely high defect density [23].…”

Section: Resultssupporting

confidence: 91%

Growth of InN thin films by modified activated reactive evaporation

Biju

Subrahmanyam²,

Jain

2008

J. Phys. D: Appl. Phys.

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Indium nitride films have been grown using modified activated reactive evaporation (MARE). The films were grown on glass and silicon substrates at room temperatures, i.e. without any intentional substrate heating. In this technique, the substrates were kept on the cathode instead of the grounded electrode and hence subjected to low energy nitrogen ion bombardment leading to highly c-axis oriented films. The photoluminescence (PL) and Raman spectrum shows significant improvement in the quality of the films compared with conventional activated reactive evaporation. The band gap measured from the room temperature PL was found to be 1.9 eV. Very high growth rates can be achieved in the MARE growth technique. The modification in the activated reactive evaporation technique may have a large impact on the growth of various compounds such as metal oxides.

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Section: Resultssupporting

confidence: 91%

Growth of InN thin films by modified activated reactive evaporation

Biju

Subrahmanyam²,

Jain

2008

J. Phys. D: Appl. Phys.

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“…InN is known to have a quite low growth temperature, as compared to other nitrides. 4) Generally, InN has hexagonal wurtzite crystal structure, and is most commonly grown along the (0001) orientation. However, c-axis oriented optoelectronic devices suffer large piezoelectric polarization field.…”

Section: Introductionmentioning

confidence: 99%

Growth of Semipolar InN(1013) on LaAlO₃(112) Substrate

Chen

Tian

Wang

et al. 2011

Jpn. J. Appl. Phys.

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In this study, we report the growth and characterization of semipolar (1013) InN films grown on LaAlO3(112) substrate by metalorganic molecular beam epitaxy. InN films were grown at various substrate temperatures in the range of 465–540 °C. Structural and optical properties of semipolar InN were investigated by high resolution X-ray diffraction, scanning electron microscopy, and photoluminescence measurements. The results show that semipolar (1013) InN layers can be grown at 510 °C with the full-width at half maximum of the X-ray rocking curve about 1400 arcsec and electron mobility of 494 cm2 V-1 s-1.

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“…Compared sputtering methods with PA-MBE and MOCVD methods [6] , it is less costly and the size of the deposited thin films can be very large. Y. L. Chung et al have studied Raman scattering and Rutherford backscattering on InN films grown by PA-MBE in 2011 [7] , S. Feng also grew the InN nanorods by PA-MBE in 2015 [8] , J. S. Hwang grew InN on sapphire (0001) substrate using a simple resistive heated MOCVD in 2001 [9] , and W. C. Ke et al have grown high density InN/GaN nanodot by pulsed mode MOCVD in 2010 [10] . And Porntheeraphat and Nukeaw studied the band gap energy (E g ) of InN thin films grown by RF magnetron sputtering in 2008 [10] , Hiroyuki Shinoda and Nobuki Mutsukura researched the structural and optical properties of RF sputtered InN in N 2 /Ar mixed gases in 2006 [11] , J. M. Khoshman et al found that the energy ranged 0.88~4.1 eV of sputtering InN onto different substrates in 2006 [12] , M. Amirhoseiny et al fabricated the wurtzite nanocrystalline (101) InN films with RF-sputtering in 2014 [13] .…”

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confidence: 99%

Band Gap and Raman Shift of InN Grown on Si (100) by Radio-Frequency Sputtering

Wang

et al. 2018

Rare Metal Materials and Engineering

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We have grown the InN films with high orientation and various typical micrographs on Si (100) substrate by radio-frequency (RF) sputtering, with Indium used as Indium target, and Nitrogen as Nitrogen source. The X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) show that all the diffraction peaks are identified to be associated with the wurtzite phase of InN, with high orientation of (101), (100) and (002). The Scanning Electron Microscope (SEM) and Energy Diffraction Spectrum (EDS) reveal that the high-quality crystal films of InN with various typical microstructures could be deposited, especially the standard of the hexagon at 60 W and 0.4 Pa. We also calculated the stress of InN films in E2 (High) by Raman spectra with an excitative wave length λ= 633 nm at room temperature. The values of the stress are different due to various microstructures. The A1 (LO) peaks are lower due to the high mobility. The calculated energies are 1.07, 1.13 and 1.32 eV. The XRD, SEM, XPS, Raman spectra, Hall and UV absorption characterizations demonstrate that we could grow different microstructures of thin films to meet the various requirements of sensors and other devices.

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Resistive heated MOCVD deposition of InN films

Cited by 15 publications

References 28 publications

Growth of InN thin films by modified activated reactive evaporation

Growth of InN thin films by modified activated reactive evaporation

Growth of Semipolar InN(1013) on LaAlO₃(112) Substrate

Band Gap and Raman Shift of InN Grown on Si (100) by Radio-Frequency Sputtering

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Resistive heated MOCVD deposition of InN films

Cited by 15 publications

References 28 publications

Growth of InN thin films by modified activated reactive evaporation

Growth of InN thin films by modified activated reactive evaporation

Growth of Semipolar InN(1013) on LaAlO3(112) Substrate

Band Gap and Raman Shift of InN Grown on Si (100) by Radio-Frequency Sputtering

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Growth of Semipolar InN(1013) on LaAlO₃(112) Substrate