Resistive Memory for Harsh Electronics: Immunity to Surface Effect and High Corrosion Resistance via Surface Modification

Abstract

The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.

Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

“…Harsh electronics is an emerging field aiming at the promotion of device capability and applicability in harsh environments, including the extremes of pressure, vibration, and chemically corrosive environments [1,2]. For practical uses, harsh electronic systems are required to be self-powered and operated independently because their working environments are usually inaccessible for human [3][4][5][6].…”

Surface-Controlled Metal Oxide Resistive Memory

“…It has been reported that by introducing transparent graphene electrodes as a passivation layer, the detrimental surface effect can be eliminated [4]. He et al had reported that surface modification of ZnO resistive memory via fluorine and nitrogen doping to replace the oxygen sites leads to superior performance uniformity [5]. However, these optimization methodologies come with additional cost and complexity of fabrication process.…”

Effect of ultraviolet illumination on metal oxide resistive memory

“…O À 2 ðadÞ ) at surface-related defects, the so-called surface effect. 4 Indeed, recent studies investigating the influence of ambiences conditions, 5 harsh environments, 6 and roughness 7 on metal oxidebased RRAM have highlighted SDR as the main cause of low switching yield and resistance fluctuation. On the other hand, the treatments such as surface modification, 6 doping, 8 and electrode material engineering 9 have improved RS stability and RRAM performance due to the better controllability of chemisorbed oxygen at surface-related defects.…”

“…4 Indeed, recent studies investigating the influence of ambiences conditions, 5 harsh environments, 6 and roughness 7 on metal oxidebased RRAM have highlighted SDR as the main cause of low switching yield and resistance fluctuation. On the other hand, the treatments such as surface modification, 6 doping, 8 and electrode material engineering 9 have improved RS stability and RRAM performance due to the better controllability of chemisorbed oxygen at surface-related defects. In this regard, the light illumination with the energy higher than the bandgap of metal oxide memory, which modulates the chemisorbed oxygen at surface-related defects via oxygen photodesorption 10 is expected to have impacts on RRAM stability and performance.…”