Resistive memory physical mechanism in a thin-film Ag/YBa2Cu3O7-x/Ag structure

Waskiewicz, Jan; Gołębiowski, Jerzy

doi:10.15199/48.2015.11.72

Cited by 4 publications

(7 citation statements)

References 14 publications

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“…40Ω). Such non-linearity of resistance for structures based on YBa 2 Cu 3 O 7-x was presented both in our papers [9,18] and in the work of other authors [21]. The reason for this lies in the mechanism of electric conductivity of carriers induced from trap levels, just O 2ions (Poole-Frenkel mechanism) [22,23].…”

Section: Measurement Resultssupporting

confidence: 60%

“…Resistance was determined using a technical method in a 4-wire system, supplying microbridge from a current source. Such a supplying mode is more beneficial when testing the phenomenon of electroresistance in comparison to the voltage source [9]. With current stabilization, changes in the resistivity of one area do not cause changes in the electric field in neighboring areas, which allows better identification of physical phenomena depending on the intensity of this field.…”

Section: Measurement Methodsmentioning

confidence: 99%

“…The phenomenon of electro-resistance memory in oxide materials with a perovskite crystallographic structure occurs as a result of electrodiffusion of O 2oxygen ions through oxygen vacancies [7,9,10,[14][15][16]. Oxygen diffusion inside and outside the perovskite layer changes the oxygen deficit value.…”

Section: Introductionmentioning

confidence: 99%

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The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory

Waskiewicz¹

2019

ELECTROTECHNICAL REVIEW

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The paper attempts to determine the chemical diffusion coefficient of oxygen ions in the thin YBa 2 Cu 3 O 7-x layer of the electro-resistance memory at room temperature. The measurement method was based on the assumption that in the process of switching the sample resistance by means of current pulses there is a stage of diffusion of oxygen ions in the layer of finite thickness from the source located at its surface. This layer is the oxygen depleted layer at the electrode. Its thickness was determined empirically from the amplitude characteristics of the resistive states, while the diffusion time constant was obtained from measurements of the resistance relaxation curves. The value of 5.5 • 10-18 m 2 /s of the oxygen diffusion coefficient in YBa 2 Cu 3 O 7-x obtained in this paper is in the order of magnitude consistent with the literature data obtained under similar conditions. Streszczenie. W pracy podjęto próbę wyznaczenia współczynnika dyfuzji chemicznej jonów tlenu w cienkiej warstwie YBa 2 Cu 3 O 7-x pamięci elektrorezystancyjnej w temperaturze pokojowej. Metodę pomiaru oparto na założeniu, że w procesie przełączania rezystancji próbki za pomocą impulsów prądowych występuje etap dyfuzji jonów tlenu w warstwie o skończonej grubości ze źródła zlokalizowanego przy jej powierzchni. Warstwą tą jest przyelektrodowa warstwa zubożona w tlen. Jej grubość wyznaczono doświadczalnie z charakterystyk amplitudowych stanów rezystancyjnych, natomiast stałą czasową dyfuzji otrzymano z pomiarów przebiegów relaksacji rezystancji. Otrzymana w pracy wartość 5,5•10-18 m 2 /s współczynnika dyfuzji jonów tlenu w YBa 2 Cu 3 O 7-x jest co do rzędu wielkości zgodna z danymi literaturowymi uzyskanymi w podobnych warunkach. (Pomiar współczynnika dyfuzji jonów tlenu w warstwie YBa 2 Cu 3 O 7-x pamięci elektrorezystancyjnej)

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Section: Measurement Resultssupporting

confidence: 60%

Section: Measurement Methodsmentioning

confidence: 99%

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The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory

Waskiewicz¹

2019

ELECTROTECHNICAL REVIEW

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“…This phenomenon occurs in many materials and at different temperatures (from 4 to 400K). Examples are oxide materials with a regular crystallographic structure, such as: TiO 2 [3], NiO, Al 2 O 3 [4,5], or having a more complex perovskite structure: YBa 2 Cu 3 O 7-x [6][7][8][9], Bi 2 Sr 2 CaCu 2 O 8+δ [10], Pr 1-x Ca x MnO 3 [11], La 1-x Sr x CoO 3 [12], SrTiO 3 [13]. The latter also exhibit the properties of high-temperature superconductors (HTS).…”

Section: Introductionmentioning

confidence: 99%

Measurement of the thickness of the oxygen-depleted layer in the Ag/YBa2Cu3O7-x/Ag structures of the electro-resistance memory

Waskiewicz

2018

ELECTROTECHNICAL REVIEW

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The paper presents the results of experimental investigations of the phenomenon of electro-resistance memory in the Ag/YBa 2 Cu 3 O 7-x /Ag thin-film structure at room and liquid nitrogen temperature. On the basis of the obtained voltage-current and amplitude characteristics, the threshold values of the resistive switching voltage were determined. Differences in the levels of these voltages at different switching directions and temperatures are explained using a mechanism based on oxygen ion electro-diffusion via oxygen vacancies. Using the mathematical model of this mechanism on the basis of the switching voltage values obtained, the thickness of layers depleted in oxygen ions were determined, which play a fundamental role in the switching process. The obtained thicknesses from 1.2 to 10.6 nm are consistent with the literature data for similar structures. Streszczenie. W pracy przedstawiono wyniki badań doświadczalnych zjawiska pamięci elektrorezystancyjnej w strukturze cienkowarstwowej Ag/YBa 2 Cu 3 O 7-x /Ag w temperaturze pokojowej i ciekłego azotu. Na podstawie uzyskanych charakterystyk napięciowo-prądowych i amplitudowych wyznaczono wartości progowe napięcia przełączania rezystancji. Różnice poziomów tych napięć przy różnych kierunkach przełączania oraz temperaturach wyjaśniono za pomocą mechanizmu opartego na elektrodyfuzji jonów tlenu poprzez wakansy tlenowe. Wykorzystując model matematyczny tego mechanizmu na podstawie otrzymanych wartości napięcia przełączania wyznaczono grubości warstw zubożonych w jony tlenu, które odgrywają zasadniczą rolę w procesie przełączania. Otrzymane grubości od 1,2 do 10,6 nm są zgodne z danymi literaturowymi dla podobnych struktur. (Pomiar grubości warstwy zubożonej w tlen w strukturach Ag/YBa 2 Cu 3 O 7-x /Ag pamięci elektrorezystancyjnej).

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“…What makes YBCO such an interesting material to build ReRAM devices is the possibility of modifying its oxygen content by applying moderate electric fields and thus producing large changes in its conductivity [17][18][19]. As will be discussed in detail later, transport properties through metal-YBCO interfaces are controlled by oxygen content inhomogeneities of YBCO, close to the interface [20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Proton irradiation effects on metal-YBCO interfaces

Acha,

Sanca,

Barella

et al. 2021

Preprint

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10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to ∼ 80•10 9 p/cm 2 no changes in the electrical behavior of the device were observed, while for a fluence of ∼ 300•10 9 p/cm 2 it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the γ power exponent parameter [γ = dLn(I)/dLn(V )] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.

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Resistive memory physical mechanism in a thin-film Ag/YBa2Cu3O7-x/Ag structure

Cited by 4 publications

References 14 publications

The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory

The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory

Measurement of the thickness of the oxygen-depleted layer in the Ag/YBa2Cu3O7-x/Ag structures of the electro-resistance memory

Proton irradiation effects on metal-YBCO interfaces

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