Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes

Abstract

We use single-walled carbon nanotube (CNT) crossbar electrodes to probe sub-5 nm memory domains of thin AlOx films. Both metallic and semiconducting CNTs effectively switch AlOx bits between memory states with high and low resistance. The low-resistance state scales linearly with CNT series resistance down to ∼10 MΩ, at which point the ON-state resistance of the AlOx filament becomes the limiting factor. Dependence of switching behavior on the number of cross-points suggests a single channel to dominate the overall characteristics in multi-crossbar devices. We demonstrate ON/OFF ratios up to 5 × 10(5) and programming currents of 1 to 100 nA with few-volt set/reset voltages. Remarkably low reset currents enable a switching power of 10-100 nW and estimated switching energy as low as 0.1-10 fJ per bit. These results are essential for understanding the ultimate scaling limits of resistive random access memory at single-nanometer bit dimensions.

Carbon nanotube network-silicon oxide non-volatile switches

“…However, individually broken CNTs cannot be manufactured yet, because there is large variation in gap size created from this process 14,15 . It is also difficult to control the placement of many individual CNTs at a high packing density, even in crossbar geometries 16,17 . To overcome some of these problems, patterned CNT networks or graphene 12,18 can be used instead.…”

Thermal analysis for observing conductive filaments in amorphous InGaZnO thin film resistive switching memory

“…Increasing data storage demands in computing, imaging, and mobile electronics are necessitating the development of memories that continue to push the limits in storage density, operation speed, and low power consumption. 1 The nonvolatile memory (NVM) should display characteristics such as high density, low cost producibility, fast write and read access, low energy operation, and great endurance. 2 Ferroelectric random access memory (FeRAM) and magnetoresistive random access memory (MRAM) find special applications in niche markets.…”

Reconfigurable Memristive Device Technologies

“…It should be noted that these performance records are for individual devices, and tradeoffs, such as that between retention and switching time, make it unlikely that a single device will meet all of these records. Scaling has been demonstrated as low as $8 nm for an HfO device that maintains robust functionality [50], and to $5 nm for an AlO x device using carbon nanotube electrodes [51].…”