Resistive switching and transport characteristics of an all-carbon memristor

Raeber, Thomas; Zhao, Zijun C.; Murdoch, Billy J.; McKenzie, David R.; McCulloch, D. G.; Partridge, J. G.

doi:10.1016/j.carbon.2018.04.045

Cited by 36 publications

(19 citation statements)

References 37 publications

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“…As shown in Figure 2 a, the spectrum of the MWCNTs exhibits two characteristic peaks, namely, the D-band peak (1340 cm −1 ) generated by defects and the characteristic G-band peak (1570 cm −1 ) generated by the in-plane vibration of sp2 carbon atoms. The intensity ratio of the D-band peak to the G-band peak of the CNTs (ID/IG) is 0.98, indicating the existence of structural defects and disorder in the MWCNTs [ 18 , 22 ]. As shown in Figure 2 b, the spectrum of the GQDs exhibits a very weak D-band peak at 1370 cm −1 , indicating the existence of local defects and lattice disorder, and another characteristic G-band peak is located near 1620 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

“…The electrical properties of corresponding memristors could be designed by controlling the parameters of the carbon nanotubes [ 21 ]. Thomas studied the electrical properties of a resistive switching device made of amorphous carbon, where the switching behavior was caused by a conductive pathway formed by transitions between the hybrid states of sp2 and sp3 [ 22 ]. Liu fabricated an ITO/SC-MCNT/PI/Al memristor based on carbon composite nanofibers (SC-MCNTs).…”

Section: Introductionmentioning

confidence: 99%

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Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

et al. 2021

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Nanocarbon materials have the advantages of biocompatibility, thermal stability and chemical stability and have shown excellent electrical properties in electronic devices. In this study, Al/MWCNT:GQD/ITO memristors with rewritable nonvolatile properties were prepared based on composites consisting of multiwalled carbon nanotubes (MWCNTs) and graphene quantum dots (GQDs). The switching current ratio of such a device can be tuned in two ways. Due to the ultraviolet light sensitivity of GQDs, when the dielectric material is illuminated by ultraviolet light, the charge capture ability of the GQDs decreases with an increasing duration of illumination, and the switching current ratio of the device also decreases with an increasing illumination duration (103–10). By exploiting the charge capture characteristics of GQDs, the trap capture level can be increased by increasing the content of GQDs in the dielectric layer. The switching current ratio of the device increases with increasing GQD content (10–103). The device can be programmed and erased more than 100 times; the programmable switching state can withstand 105 read pulses, and the retention time is more than 104 s. This memristor has a simple structure, low power consumption, and enormous application potential for data storage, artificial intelligence, image processing, artificial neural networks, and other applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

et al. 2021

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“…6e, the learning accuracy of the ANN comprising A-RS devices was 96.7%, which was 40% higher than that of the ANN comprising D-RS devices. The higher linearity of the conductance change of the A-RS device may be responsible for the improved learning accuracy 30,67,68 . This result indicates that the all-carbon A-RS memristor has the capability for pattern recognition with high accuracy.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, Liu et al made significant progress towards all-carbon D-RS memory by employing GO as the active material 29 . Recently, Raeber et al also demonstrated all-carbon D-RS memory based on amorphous carbon materials 30 . However, analog-type RS (A-RS) with continuous resistance-state variations, which is urgently needed as an essential foundation for the biorealistic emulation of synaptic adaptive functions, has seldom been reported to our knowledge.…”

Section: Introductionmentioning

confidence: 99%

Photoreduced nanocomposites of graphene oxide/N-doped carbon dots toward all-carbon memristive synapses

et al. 2020

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An all-carbon memristive synapse is highly desirable for hardware implementation in future wearable neuromorphic computing systems. Graphene oxide (GO) can exhibit resistive switching (RS) and may be a feasible candidate to achieve this objective. However, the digital-type RS often occurring in GO-based memristors restricts the biorealistic emulation of synaptic functions. Here, an all-carbon memristive synapse with analog-type RS behavior was demonstrated through photoreduction of GO and N-doped carbon quantum dot (NCQD) nanocomposites. Ultraviolet light irradiation induced the local reduction of GO near the NCQDs, therefore forming multiple weak conductive filaments and demonstrating analog RS with a continuous conductance change. This analog RS enabled the close emulation of several essential synaptic plasticity behaviors; more importantly, the high linearity of the conductance change also facilitated the implementation of pattern recognition with high accuracy. Furthermore, the all-carbon memristive synapse can be transferred onto diverse substrates, showing good flexibility and 3D conformality. Memristive potentiation/depression was stably performed at 450 K, indicating the resistance of the synapse to high temperature. The photoreduction method provides a new path for the fabrication of all-carbon memristive synapses, which supports the development of wearable neuromorphic electronics.

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“…a-C media has been unanimously found to be a mixture of sp 3 and sp 2 sites [26], consequently making its resistivity between diamond (full sp 3 configurations) and graphite (full sp 2 configurations). It is natural to attribute the RS behaviour of a-C to the phycical/chemical conversions between sp 3 and sp 2 sites when subjected to external excitations.…”

Section: Methodsmentioning

confidence: 99%

Modeling Electrical Switching Behavior of Carbon Resistive Memory

Wang

Xiong

2020

IEEE Access

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The amorphous carbon-based resistive memory has recently attained vast attention due to its non-volatility, fast switching speed, long data retention, and multilevel recording. However, the memory switching mechanism of amorphous carbon media remains mysterious and thus severely restricted its application prospect. To resolve this issue, a comprehensive three-dimensional model by simultaneously solving the current continuity equation, heat transfer equation, and mass concentration equation, is developed to model the physical conversions between sp 2 and sp 3 clusters. According to simulations, electric field was considered as the sole critical factor that determines the formation of conductive sp 2 filament during the 'SET' process, whereas the 'RESET' process is mainly attributed to the induced high temperature that accelerates the growth of sp 3 cluster and causes the rupture of the sp 2 filament. It was additionally found that the sp 2 filament was preferably formed inside the region having larger sp 2 concentrations, and its rupture usually initiates from the filament center. The threshold voltages of carbon resistive memory for different thickness and different sp 2 fractions were also calculated and exhibited good agreement with experimental measurements. INDEX TERMS Amorphous carbon, filament, sp 2 clusters, switching.

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Resistive switching and transport characteristics of an all-carbon memristor

Cited by 36 publications

References 37 publications

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

Photoreduced nanocomposites of graphene oxide/N-doped carbon dots toward all-carbon memristive synapses

Modeling Electrical Switching Behavior of Carbon Resistive Memory

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