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Lateral memristors configured with inert Pt contacts and mixed phase tin oxide layers have exhibited immediate, forming-free, low-power bidirectional resistance switching. Activity dependent conductance and relaxation in the low resistance state resembled short term potentiation in biological synapses. After scanning probe microscopy, x-ray photoelectron spectroscopy and electrical measurements, the device characteristics were attributed to Joule heating induced decomposition of the minority SnO phase and formation of a SnO2 conducting filament with higher effective n-type doping. Finally, the devices recognized input voltage pulse sequences and spectral data by returning unique conductance states, suggesting suitability for bio-inspired pattern recognition systems.

Paired pulse inhibition is observed using amorphous carbon memristors, which enables their use for sensory gating.

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Tandem solar cells promise to overcome the theoretical single junction solar cell efficiency limit. Here we report an elegant approach to monolithically integrate perovskite and Si-heterojunction tandem solar cell by...