Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

Larentis, Stefano; Nardi, Federico; Balatti, Simone; Gilmer, D. C.; Ielmini, Daniele

doi:10.1109/ted.2012.2202320

Cited by 453 publications

(467 citation statements)

References 35 publications

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“…The tables here only cover a subset of the huge collection of published resistive switching devices. Others transport models that requires iterative or numerical calculation, such as Menzel model [93], domain-based model [94,95], drift-diffusion model [96], ion-transport-recombination model [97][98][99] and hourglass model [100,101] are deliberately omitted in this article.…”

Section: Conduction Mechanism Of Published Resistive Switching Memoriesmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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Section: Conduction Mechanism Of Published Resistive Switching Memoriesmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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“…In contrast with the experimental efforts, theoretical studies remain relatively scarce [16][17][18][19][20][21][22][23][24]. A few Published by the American Physical Society under the terms of the Creative Commons Attribution 3.0 License.…”

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confidence: 99%

“…In contrast with the experimental efforts, theoretical studies remain relatively scarce [16][17][18][19][20][21][22][23][24]. A few phenomenological models were proposed and numerically investigated, which captured different aspects of the observed effects [3,[25][26][27].…”

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confidence: 99%

Shock Waves and Commutation Speed of Memristors

et al. 2016

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Progress of silicon-based technology is nearing its physical limit, as the minimum feature size of components is reaching a mere 10 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next-generation electronics. Significant progress has already been made in the past decade, and devices are beginning to hit the market; however, this progress has mainly been the result of empirical trial and error. Hence, gaining theoretical insight is of the essence. In the present work, we report the striking result of a connection between the resistive switching and shock-wave formation, a classic topic of nonlinear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide-based memristor device, and we extend our theory to the case of binary oxides. The shock-wave scenario brings unprecedented physical insight and enables us to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect-the commutation speed. DOI: 10.1103/PhysRevX.6.011028 Subject Areas: Condensed Matter Physics, Materials Science, Nonlinear DynamicsThe information age we live in is made possible by a physical underlayer of electronic hardware, which originates in condensed-matter physics research. Despite the great progress made in recent decades, the demand for faster and power-efficient devices continues to grow. Thus, there is urgent need to identify novel materials and physical mechanisms for future electronic-device applications. In this context, transition metal oxides (TMOs) are attracting much attention for nonvolatile memory applications [1]. In particular, TMO are associated with the phenomenon of resistive switching (RS) [2] and the memristor device [3], which is emerging as a competitive technology for nextgeneration electronics [1,[4][5][6][7][8][9][10]. The RS effect is a large, rapid, nonvolatile, reversible change of the resistance, which may be used to encode logic information. In the simplest case, one may associate high and low resistance values to binary states, but multibit memory cells are also possible [11,12].Typical systems where RS is observed are two-terminal capacitor-like devices, where the dielectric might be a TMO and the electrodes are ordinary metals. The phenomenon occurs in a strikingly large variety of systemsranging from simple binary compounds, such as NiO, TiO 2 , ZnO, Ta 2 O 5 , HfO 2 , and CuO, to more complex perovskite structures, such as superconducting cuprates and colossal magnetoresistive manganites [2,4,6,9,13].From a conceptual point of view, the main challenges for a nonvolatile memory are as follows: (i) to change its resistance within nano seconds (required for modern electronics applications), (ii) to be able to retain the state for years (i.e., n...

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“…17 Also, most device modeling efforts reproduced the device characteristics using values of E A ∼1 eV. 19,21 The large value of the activation energy allows for the stability of the filament while still making it possible to switch in high electric fields and high temperatures. The equation describing the time between diffusion jumps of oxygen vacancy is…”

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Transient phases during fast crystallization of organic thin films from solution

Wan

Ulbrandt

et al. 2016

APL Materials

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We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno [3,2b][1]benzothiophene (C 8 -BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to ≈93 • C. The layered smectic liquid-crystalline phase of C 8 -BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature >60 • C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s) mobility up to 3.0 cm 2 /V-s has been observed.

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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

Cited by 453 publications

References 35 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Shock Waves and Commutation Speed of Memristors

Transient phases during fast crystallization of organic thin films from solution

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