Resistive switching characteristics of Ag/MnO/CeO 2 /Pt heterostructures memory devices

Metal Ions Redox Induced Repeatable Nonvolatile Resistive Switching Memory Behavior in Biomaterials

“…When HRS are marked as logic “0” and LRS as logic “1”, the resistor-swap cell can be used as a storage unit for information in the electronic applications. Currently, there are many researches on resistive switching memory device, various semiconductors and insulator materials have been assembled into memories as the interlayer such as MOS 2 , MnO-CeO 2 , carbon nanotube, TiO 2 , and so on. Although the rapid upgrading of electronic devices brings convenience to people’s lives, it brings a heavy burden to our environment, especially for the consumption of nonrenewable resources because of the rapid replacement. , Therefore, the development of a biobased memory devices is gaining more and more attention, and the devices with metal/biomaterials/metal structure are continuously detected. − …”

Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

“…Xu et al [ 16 ] investigated the RS behavior of ZrO 2 and ZnO double-layer stacks illustrating that migration of oxygen vacancies depend upon the height of oxide interfacial barrier. RS behavior observed in the bilayer MnO/CeO 2 structure was proposed to be due to the oxidation and reduction reaction of CeO 2 as reported by Hu et al [ 17 ]. Yang et al [ 18 ] revealed good resistive switching characteristics of bilayer CuO/ZnO devices as compared to single-layer ZnO-based devices.…”

“…So ceria films can be non-stoichiometric as we have already proved in our earlier research work that ceria is reduced to CeO 2−x [ 12 ]. Hu et al [ 17 ] also reported such reduction of CeO 2 during deposition to CeO 2−x . Defects in the CeO 2−x films are insufficient to mobilize oxygen ions.…”

Synaptic and Gradual Conductance Switching Behaviors in CeO2/Nb–SrTiO3 Heterojunction Memristors for Electrocardiogram Signal Recognition

“…Kim et al obtained a high recognition rate of 93% for handwritten numerals in the TiN/TaO 2 /Pt device through adjusting the Schottky barrier height by the oxygen migration between electrodes and TaO 2. Nevertheless, the current transmission in the Schottky barrier-based metal–semiconductor memristors has no relaxation process, which is not conducive to simulating long-term plasticity of neural synapses. , In contrast, the separation and recombination of carriers in the Schottky barrier-based oxide-semiconductor heterojunction take some time. , On the other hand, CeO 2 memristors are widely studied because of their excellent characteristics such as a high ON/OFF ratio and high stability. − However, we hardly see studies on the application of CeO 2 devices in artificial synapses, which may be due to their abrupt conductance change. This disadvantage could be overcome by replacing the metal electrode with a doped semiconductor such as Nb–SrTiO 3 because the gradual conductance change could be achieved by charge trapping/detrapping at the CeO 2 film and the Nb–SrTiO 3 heterojunction …”