Resistive switching control in forming-free nanocrystalline zinc oxide films

Abstract

The influence of control parameters on the resistive switching effect in forming-free nanocrystalline zinc oxide films was studied. It was shown, resistive switching from HRS to LRS was observed at (+3.3±0.4) V, and from LRS to HRS at (-2.8±0.6) V. Changing the triangular sweep voltage signal phase by 90 degrees leads to a decrease R HRS from (52.7±5.2) kΩ to (38.3±20.2) kΩ, to an increase R LRS from (3.3±2.2) kΩ to (4.5±3.1) kΩ, and to a decrease R HRS /R LRS ratio from 17 to 9. Experimental results obtained showed, that an increase in amplitude of the sweep voltage U A from 2V to 6V and sweep time t A from 1s to 5s leads to a decrease in the R HRS /R LRS ratio from (25.1±2.4) to (9.3±0.6) and from (23.2±1.8) to (10.4±0.8), respectively. The results can be useful for the development of technological fundamentals of new-generation micro- and nanoelectronics elements manufacturing, including ReRAM elements for neuromorphic structures based on forming-free ZnO nanocrystalline films.