The paper presents the results of study of the resistive switching effect in titanium oxide nanostructures obtained by local anodic oxidation. It was shown that the resulting structures exhibited a forming-free resistive switching effect. Analysis of the current-time characteristics made it possible to obtain a resistance ratio in the HRS and LRS states of about 70. The formed LRS regions persisted for 75 days.

This work presents the results of the investigations of resistive switching effect in Si(100)/HfO2 structure. It was shown that resistive switching from HRS to LRS occurred at 0.4±0.1 V, and from LRS to HRS at -0.5±0.1 V. An increase in the sweep voltage from 1 to 5 V led to a decrease in the HRS/LRS ratio from 606±36 to 204±11. Thus, it was shown that the nanocrystalline HfO2 film resistance varied within two orders of magnitude at a sweep voltage of 1 V within 15 measurements. The results can be useful for manufacturing neuromorphic systems based on forming-free nanocrystalline HfO2 films.

The influence of control parameters on the resistive switching effect in forming-free nanocrystalline zinc oxide films was studied. It was shown, resistive switching from HRS to LRS was observed at (+3.3±0.4) V, and from LRS to HRS at (-2.8±0.6) V. Changing the triangular sweep voltage signal phase by 90 degrees leads to a decrease R HRS from (52.7±5.2) kΩ to (38.3±20.2) kΩ, to an increase R LRS from (3.3±2.2) kΩ to (4.5±3.1) kΩ, and to a decrease R HRS /R LRS ratio from 17 to 9. Experimental results obtained showed, that an increase in amplitude of the sweep voltage U A from 2V to 6V and sweep time t A from 1s to 5s leads to a decrease in the R HRS /R LRS ratio from (25.1±2.4) to (9.3±0.6) and from (23.2±1.8) to (10.4±0.8), respectively. The results can be useful for the development of technological fundamentals of new-generation micro- and nanoelectronics elements manufacturing, including ReRAM elements for neuromorphic structures based on forming-free ZnO nanocrystalline films.

This work is devoted to the study of the modes of synthesis of films of nanocrystalline vanadium oxide for the manufacture of resistive memory elements (ReRAM) of neuromorphic systems. The regularities of the influence of pulsed laser deposition modes on the morphology and electrophysical properties of vanadium oxide films were experimentally established considering the technological parameters of the substrate temperature and temperature of postgrowth annealing. Fabrication modes of nanocrystalline vanadium oxide films were determined with the high-resistance state RHRS = (123.42 ± 21.77) × 103 Ω, the low-resistance state RLRS = (5.12 ± 1.36) × 102 Ω, and the ratio RHRS/RLRS = 253, for the creation of elements of resistive memory with low power consumption and a wide range of accepted possible resistance values. The results obtained can be used in the development of technological processes for the formation of nanocrystalline films of vanadium oxides for resistive memory elements in neuromorphic systems.