Resistive switching in emerging materials and their characteristics for neuromorphic computing

Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives

“…Our later analysis also supported that trap controlled space charge limited conduction (SCLC) play key role in the conduction mechanism in case of observed WORM switching devices. 31,78,79 It may be mentioned in this context that in case of first three devices (device 1–device 3) showed TS. In case of device 1 SA was absent.…”

Ferroelectric Thin Films for Oxide Electronics

“…In addition, the application of subcoercive-field voltage pulses, which trigger incomplete switching of the ferroelectric polarization, enable macroscopic polarization states beyond the two saturation states and therefore the continuous tuning of the tunneling electroresistance of the FTJ. Consequently, a memristive behavior, originally developed in the resistive RAM design, has been developed in BaTiO 3 -based systems . We emphasize here that the memristive behavior is key in the design of neuromorphic-type computing schemes, in which more than two remanent states are necessary per computing bits.…”

“…Consequently, a memristive behavior, originally developed in the resistive RAM design, has been developed in BaTiO 3 -based systems. 32 We emphasize here that the memristive behavior is key in the design of neuromorphictype computing schemes, in which more than two remanent states are necessary per computing bits. We recommend the excellent reviews by Zidan et al, 33 and Asif et al 32 for an overview over the state-of-the-art design of memristors and the review by Garcia et al 34 for the latest insights into FTJs.…”

Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory

“…Most of the reported literature on a-IGZO memristors exhibited abrupt (filament type) resistive switching, whereas mimicking human brain functionalities favours analog/gradual resistive switching. 20,28 Here, we report on the observation of analog resistance switching behaviour of a noble metal-free a-IGZO-based memristor and discuss the possible reasons behind the anomalous behaviour observed with the same layer structure during the initial development stage. We attempt to correlate the earlier reports with contrasting results by suggesting the role of interface effects in such devices with the experimental outcomes.…”