Resistive switching in Strontium iridate based thin films

Fuentes, Víctor; Vasić, Borislav; Konstantinović, Z.; Martı́nez, B.; Balcells, Lluı́s; Pomar, A.

doi:10.1016/j.jmmm.2020.166419

Cited by 6 publications

(8 citation statements)

References 53 publications

(73 reference statements)

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“…As this measurement is based on the noncontact mode, it also helps to avoid extra effects by the Schottky barrier that can occur at the tip sample junction (Kumar and Som 2015). The resistive switching process is investigated via CPD mapping using KPFM (Fuentes et al 2020 Their pristine set (LRS)-reset (HRS) states are characterized through KPFM measurement at a low voltage of 1 V, a positive voltage of + 4.5 V, and a negative voltage of − 6 V (Fig. 5a), respectively.…”

Section: Quantitative Analysis Of Electrostatic Interactions Using Kpfmmentioning

confidence: 99%

“…As this measurement is based on the noncontact mode, it also helps to avoid extra effects by the Schottky barrier that can occur at the tip sample junction (Kumar and Som 2015 ). The resistive switching process is investigated via CPD mapping using KPFM (Fuentes et al 2020 ). Strontium iridate (Sr n + 1 Ir n O 3n + 1 )-based thin films have different electric conductivities according to the composition ratio and show resistive switching properties in Sr 2 IrO 4 compositions.…”

Section: Introductionmentioning

confidence: 99%

“…a CPD map measured under pristine (0 V), LRS (4.5 V), and HRS (− 6 V) conditions. b CPD profile along the green dashed line in ( a ) (Fuentes et al 2020 ). c-g Measurements of InP/ZnS quantum dot-based films.…”

Section: Introductionmentioning

confidence: 99%

“…g CPD profile comparison between the green line in ( e ) and the blue line in ( f ) (Wang et al 2020 ). Reprinted from Fuentes et al ( 2020 ) and Wang et al ( 2020 ) ( J . Magn .…”

Section: Introductionmentioning

confidence: 99%

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Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

et al. 2021

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Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.

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Section: Quantitative Analysis Of Electrostatic Interactions Using Kpfmmentioning

confidence: 99%

“…As this measurement is based on the noncontact mode, it also helps to avoid extra effects by the Schottky barrier that can occur at the tip sample junction (Kumar and Som 2015 ). The resistive switching process is investigated via CPD mapping using KPFM (Fuentes et al 2020 ). Strontium iridate (Sr n + 1 Ir n O 3n + 1 )-based thin films have different electric conductivities according to the composition ratio and show resistive switching properties in Sr 2 IrO 4 compositions.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…g CPD profile comparison between the green line in ( e ) and the blue line in ( f ) (Wang et al 2020 ). Reprinted from Fuentes et al ( 2020 ) and Wang et al ( 2020 ) ( J . Magn .…”

Section: Introductionmentioning

confidence: 99%

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Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

et al. 2021

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“…As the material makes transition from bulk to the nanoscale, their properties undergo significant transformations, resulting in potentially unique behaviors [16,17]. Recently, a resistive switching behavior has been shown in ultra-thin (∼2 nm) SrIrO 3 /SrTiO 3 film at room temperature [18,19]. This underlines the need of extensive investigation of conduction mechanisms in thin films.…”

Section: Introductionmentioning

confidence: 99%

Current–voltage characteristics in single layer SrIrO₃ films deposited on LaAlO₃(100) substrate

Chaurasia,

Pramanik

2023

J. Phys.: Condens. Matter

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Here, we investigate the structural and electrical properties on SrIrO3 films grown on LaAlO3 (100) substrate with varying thickness (18, 25 and 40 nm). The x-ray diffraction shows good quality epitaxial films without any chemical impurity. The out-of-plane lattice parameter increases with the film thickness. All the films show a semiconducting behavior where the resistivity increases with increasing thickness. Our analysis shows at high temperature the charge conduction mechanism follows Mott’s two-dimensional variable-range-hopping model. Detailed current–voltage (I–V) measurements show a linear Ohmic behavior at room temperature, however, a prominent deviation from linearity has been observed at low temperatures where the exponent n ( I ∝ V n ) increases with decreasing temperature, reaching n ∼ 1.5 at low temperature. Analysis of I–V data indicates that the charge conduction has dominant contribution of Poole–Frenkel mechanism rather than Schottky behavior. This evolution of charge transport with temperature is quite intriguing which may be related to the development of low temperature magnetism in films of SrIrO3.

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Enhanced synaptic performances in SrIrO3 thin films by a ferroelectric layer

Xiao

et al. 2023

Applied Physics Letters

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SrIrO3 (SIO) with a perovskite structure exhibits broad application prospects in electronic synapses due to its high carrier mobility, scalability, and compatibility with silicon technology. On the other hand, ferroelectric polarization can efficiently and directionally regulate the movement of carriers, which provides the possibility to improve the synaptic properties of such materials. In this study, electronic synapses based on the SIO epitaxial film with introducing a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer, multiple important synaptic plasticity functions including paired-pulse depression, spike-rate-dependent plasticity, spike-time-dependent plasticity, and abnormal Bienenstock–Cooper–Munro learning rule have been simulated by electrical stimulation. Furthermore, the PZT/SIO/Nb:SrTiO3 (NSTO) device exhibits larger synaptic weight and dynamic range of conductance and requires less training pulses compared to the SIO/NSTO device, which may be attributed to the enhanced modulation of the variation in the SIO/NSTO interface barrier by the polarization field. This research makes a great contribution to the efficient and fast information transmission of neuromorphic computing.

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Resistive switching in Strontium iridate based thin films

Cited by 6 publications

References 53 publications

Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Current–voltage characteristics in single layer SrIrO₃ films deposited on LaAlO₃(100) substrate

Enhanced synaptic performances in SrIrO3 thin films by a ferroelectric layer

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Resistive switching in Strontium iridate based thin films

Cited by 6 publications

References 53 publications

Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Current–voltage characteristics in single layer SrIrO3 films deposited on LaAlO3(100) substrate

Enhanced synaptic performances in SrIrO3 thin films by a ferroelectric layer

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Product

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Current–voltage characteristics in single layer SrIrO₃ films deposited on LaAlO₃(100) substrate