Resistive Switching Memory Based on CuSCN Films Fabricated by Solution-Dipping Method

Contrasting analog and digital resistive switching memory characteristics in solution-processed copper(i) thiocyanate and its polymer electrolyte-based memristive devices

“…Initial studies on CuSCNbased RS memristive devices used a composite of CuSCN or copper-doped CuSCN solid electrolytes showing digital RS characteristics. 25,26 In both cases, the deposition method of CuSCN was rigorous and complicated, involving either thermal evaporation of KSCN on the copper surface or dipping in the copper electrode in a solution of NaSCN. Another work involving CuSCN was reported by B. Cheng et al 27 They showed bipolar RS behavior in a multilayer RS medium made up of CuSCN/PMMA/ZnO that worked as a p-i-n heterojunction diode.…”