Resistive switching of in situ polymerized polystyrene matrix copolymerized with alkanedienyl passivated Si nanoparticles

Kim, Minkeun; Jung, Hunsang; Kim, Yo-Han; Kang, Chi Jung; Yoon, Tae‐Sik; Lee, Hyun Ho

doi:10.1016/j.mee.2015.03.043

Cited by 10 publications

(10 citation statements)

References 17 publications

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“…After the dip-coating, the substrate was dried in air. In the dip-coating process, the NP layer was formed by Van der Waals adsorption, and the corresponding assembly was formed upon the evaporation of the solvent or by the convective self-assembly of the NPs being driven into the meniscus of the solution at the substrate surface [ 9 ]. The NP layer was subsequently annealed at 300 °C for 15 min in air to decompose the surfactants or ligands from the NPs surface.…”

Section: Methodsmentioning

confidence: 99%

“…The formation of multiple NP layers was enabled and processed by multiple dip-coatings based on Van der Waals adsorption [2][3][4]. Otherwise, hybrid nanocomposite layers with polymeric matrices or binders such as poly(methyl methacrylate) (PMMA), polystyrene (PS) and polyvinylphenol (PVP) have been pursued for the analog RS device [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device

Kang

Woo

et al. 2021

Nanomaterials

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Square-shaped or rectangular nanoparticles (NPs) of lanthanum oxide (LaOx) were synthesized and layered by convective self-assembly to demonstrate an analog memristive device in this study. Along with non-volatile analog memory effect, selection diode property could be co-existent without any implementation of heterogeneous multiple stacks with ~1 μm thick LaOx NPs layer. Current–voltage (I–V) behavior of the LaOx NPs resistive switching (RS) device has shown an evolved current level with memristive behavior and additional rectification functionality with threshold voltage. The concurrent memristor and diode type selector characteristics were examined with electrical stimuli or spikes for the duration of 10–50 ms pulse biases. The pulsed spike increased current levels at a read voltage of +0.2 V sequentially along with ±7 V biases, which have emulated neuromorphic operation of long-term potentiation (LTP). This study can open a new application of rare-earth LaOx NPs as a component of neuromorphic synaptic device.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device

Kang

Woo

et al. 2021

Nanomaterials

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“…Resistive switching (RS) devices have provided versatile functionalities in a simple two terminal structure of metal–insulator–metal (MIM) demonstrating digital-type, analog-type, threshold voltage switching and bistable unipolar or bipolar operations. − Typically, the RS devices have been primarily used for resistance random access memory (RRAM or ReRAM) with the digital-type function having bistable turn-on and turn-off output signal. In fact, the digital-type RS has been widely reported utilizing many material systems including organic, inorganic, and hybrid materials including nanostructures and nanoparticles (NPs). ,,, These kinds of devices have been well characterized with distinguished signals between high-resistance state (HRS) and low-resistance state (LRS) with discontinuous on/off information.…”

Section: Introductionmentioning

confidence: 99%

“…In fact, the digital-type RS has been widely reported utilizing many material systems including organic, inorganic, and hybrid materials including nanostructures and nanoparticles (NPs). ,,, These kinds of devices have been well characterized with distinguished signals between high-resistance state (HRS) and low-resistance state (LRS) with discontinuous on/off information. However, for this reason, when a system is subjected to construct or recognize complex information such as a neurosystem or synaptic system, multiple RS devices or a complicated logical architecture of the RS devices should be implemented to synchronize both calculation and memory functionality simultaneously. − …”

Section: Introductionmentioning

confidence: 99%

Analog Memristive Characteristics of Mesoporous Silica–Titania Nanocomposite Device Concurrent with Selection Diode Property

Jung

Kim

et al. 2019

ACS Appl. Mater. Interfaces

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A threshold resistive switching (RS) device concurrently demonstrating analog memristive property with mesoporous silica–titania (m-ST) nanocomposites is introduced in this study. The nanostructured m-ST layer in an Al/m-ST/Pt device was constructed by facile soft templating of evaporation-induced self-assembly (EISA) method to demonstrate nonlinear threshold RS behaviors accompanying with discrete synaptic characteristics along with adaptive motions. The EISA layer was composed of well-ordered mesopores (∼10 nm), where paths of electrical currents could be controllably guided and sequentially activated by repeated voltage sweeps. The combinational memristive behavior accompanying the shift of threshold voltage (V th) could implicate concurrent performances of threshold RS and selection diode devices. In addition, synaptic functionalities of long-term potentiation and depression were characterized by variations of pulse timing width (7–100 ms). Physical and chemical features of the m-ST were analyzed with Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and optical microscopy to investigate the unique origin of dual operation modes of the device. The m-ST synaptic device could have potential for further development of a hybrid selection diode having both a low sneaky current loss and memristive characteristics accomplishing low level of cross-talk between RS devices.

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“…In such hybrid structures, PMMA or PVA serves as a matrix for embedding inorganic particles, for example, inorganic oxides such as ZnO nanoparticles and nanorods [39][40][41][42][43] AlO x and HfO x [44,45], SnO 2 nanoparticles [46] as well as perovskites [22,23,47], 2-D material MoS 2 [25], silver nanoparticles [48] and Ag ions [49]. The embedded inorganic particles form bulk-heterojunctions [50] and the wide electronic bandgap of the polymer matrix might restrict the movement of trapped charge carriers after disconnecting the electrical power and preserve the state of the memristive cell, leading to long retention times.…”

Section: Our Approachmentioning

confidence: 99%

Memristive devices based on mass printed organic resistive switching layers

et al. 2021

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Resistive random-access memory is a candidate for next-generation non-volatile memory architectures. In this study, we use flexographic roll-to-roll printing technology for deposition of the resistive layer, a printing method that allows fast and cost-effective fabrication to create non-volatile resistive memory devices. Metal-free organic polymers blends composed of poly(methyl methacrylate) (PMMA) and a surplus of poly(vinyl alcohol) (PVA) serve as the active layer. Microscopic studies of the roll-to-roll printed layers show circular domains of PMMA embedded in PVA. The influence of the PMMA content in the polymer blend is investigated with respect to the performance and reliability of the resistive memory cells. Electrical characterization reveals a retention time of at least eleven days, a Roff/Ron ratio of approx. two orders and write/erase voltages of + 1/−2 V.

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Resistive switching of in situ polymerized polystyrene matrix copolymerized with alkanedienyl passivated Si nanoparticles

Cited by 10 publications

References 17 publications

Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device

Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device

Analog Memristive Characteristics of Mesoporous Silica–Titania Nanocomposite Device Concurrent with Selection Diode Property

Memristive devices based on mass printed organic resistive switching layers

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