Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

Abstract

The Ce and Mn co-doped BiFeO3 (BCFMO) thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80), long retention time (>105 s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices.

Local atomic structure of V-doped BiFeO3 thin films measured by X-ray fluorescence holography

“…8) It is expected to be used in resistance-change memory [resistive random access memory (ReRAM)] 9,10) because it can create two states-a high-resistance state and low-resistance state-that control carriers through spontaneous polarization. [11][12][13][14][15] For BFO to be used as a ferroelectric semiconductor, carrier control through impurity doping, similar to carrier control in Si semiconductors, is an important issue. Transition-metal doping into BFO has been well investigated as a method to suppress the leakage current.…”

Low leakage current resistive memory based on Bi1.10 (Fe0.95Mn0.05) O3 films

“…In order to solve this problem, various improvements have been made, such as doping, stacking, and improving growth patterns. Despite these advances, however, the problem of high leakage current remains [24][25][26].…”