Resistivity changes in silicon single crystals induced by heat treatment

Fuller, C. S.; Ditzenberger, J. A.; Hannay, N. B.; Buehler, E.

doi:10.1016/0001-6160(55)90021-3

Cited by 74 publications

(35 citation statements)

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“…The thermal donors appear as three families: the thermal double donors ͑TDD's͒, shallow thermal donors, and new thermal donors. [5][6][7][8][9] The presence of thermal donors significantly degrades the performance of the Si wafers used for integrated circuits, and TDD's are probably among the most studied defects in semiconductors. It is commonly believed that TDD's have a common core to which oxygen atoms aggregate to form a series of closely related TDD's.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

et al. 2002

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Migration, restructuring, and dissociation energies of oxygen complexes in silicon are studied theoretically through density-functional total-energy calculations. We find that the stablest oxygen complexes are straight chains that also have the lowest migration energies. The calculated migration energies decrease from 2.3 eV for an interstitial oxygen atom (O i ) to low values of 0.4 -1.6 eV for O 2 -O 9 chains and 1.9-2.2 eV for longer chains. The oxygen chains ͑which are thermal double donors͒ are expected to grow so that the migrating oxygen chains capture less-mobile but abundant O i 's: O n ϩO i →O nϩ1 . Restructuring energies of chains with a side O i into straight oxygen chains are 1.9-2.5 eV. Restructuring gives an essential contribution to the fast diffusion. We find that the shorter O 2 -O 9 chains dissociate primarily by ejecting one of the outermost oxygen atoms.

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Section: Introductionmentioning

confidence: 99%

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

et al. 2002

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“…It is well known that in other semiconductors oxygen can form electrically active defects, like the A center 2 and the thermal double donors in silicon. 3 Therefore, the behavior of oxygen in bulk SiC is also of interest.…”

Section: Introductionmentioning

confidence: 99%

Isolated oxygen defects in3C- and4H-SiC: A theoretical study

et al. 2002

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Ab initio calculations in the local-density approximation have been carried out in SiC to determine the possible configurations of the isolated oxygen impurity. Equilibrium geometry and occupation levels were calculated. Substitutional oxygen in 3C-SiC is a relatively shallow effective mass like double donor on the carbon site (O C ) and a hyperdeep double donor on the Si site (O Si ). In 4H-SiC O C is still a double donor but with a more localized electron state. In 3C-SiC O C is substantially more stable under any condition than O Si or interstitial oxygen (O i ). In 4H-SiC O C is also the most stable one except for heavy n-type doping. We propose that O C is at the core of the electrically active oxygen-related defect family found by deep level transient spectroscopy in 4H-SiC. The consequences of the site preference of oxygen on the SiC/SiO 2 interface are discussed.

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“…A related ͑harmful and at the same time interesting͒ phenomenon is the appearance of the so-called thermal donors. 1 These are commonly believed to contain a core to which oxygen atoms aggregate resulting in a family of closely related donors. Several families of thermal donors are known: thermal double donors, shallow thermal donors, and new thermal donors.…”

Section: Introductionmentioning

confidence: 99%

“…Several families of thermal donors are known: thermal double donors, shallow thermal donors, and new thermal donors. [1][2][3][4] At least sixteen thermal donor members have been observed. 2,5 Individual oxygen atoms occupy interstitial bond-center ͑BC͒ positions in silicon.…”

Section: Introductionmentioning

confidence: 99%

Computational study of interstitial oxygen and vacancy-oxygen complexes in silicon

Boehm²,

et al. 1999

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The formation and binding energies, the ionization levels, the structures, and the local vibrations of O i , O 2i , O 3i , VO, VO 2 , and V 2 O (Vϭvacancy͒ in silicon are calculated using a self-consistent total-energy pseudopotential method. The most important results are as follows: The ionization levels and associated structures are given for VO and V 2 O as well as the local vibration modes for the negative charge states of VO.

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Resistivity changes in silicon single crystals induced by heat treatment

Cited by 74 publications

References 1 publication

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

Isolated oxygen defects in3C- and4H-SiC: A theoretical study

Computational study of interstitial oxygen and vacancy-oxygen complexes in silicon

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