The diffusion of the Group III (B, Al, Ga, In, and Tl) and Group V (P, As, Sb, and Bi) elements in silicon has been measured in the temperature range 1050–1350°C. A method based on change in conductivity through the penetration layer has been used for B and P. The p-n junction method has been used for the other elements. Aside from B and P, which have similar diffusional properties, the acceptor elements diffuse more rapidly than the donor elements. Diffusion coefficients are given by DB, P=10.5 exp − (85 000/RT), DA1=8.0 exp − (80 000/RT), DGa=3.6 exp − (81 000/RT), DIn, T1=16.5 exp − (90 000/RT), DAs=0.32 ×exp − (82 000/RT), DSb=5.6 exp − (91 000/RT), DBi=1030 exp − (107 000/RT) with an average estimated error of about ±40%. This corresponds to an error in the activation energies of about ±5 kcal. Sources of error including the effects of impurities in the oxides are discussed. D0 values in most cases conform to the predictions of Zener for substitutional diffusion.

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The diffusivity and solubility of Cu in Ge have been investigated as a function of temperature in the temperature range 700°-900°C, both by resistivity and radio-activity methods. The average diffusivity is 2.8±0.3X10~5 cm 2 /sec in this temperature interval. The solubility shows a maximum of 4.0X10 16 atoms of copper cm -3 at about 875°C. The precision is not sufficient to determine an activation energy for diffusion. However, calculations based upon a theory of Wert and Zener, indicate an activation energy of about 4000 cal. The "thermal conversion" effect in Ge is explained by a temperature-dependent solution and precipitation of Cu. It is suggested that the acceptor and diffusional properties of Cu in Ge can be accounted for by decreased electron affinity of Cu at higher temperatures.

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