Diffusion of Donor and Acceptor Elements in Silicon

Abstract

The diffusion of the Group III (B, Al, Ga, In, and Tl) and Group V (P, As, Sb, and Bi) elements in silicon has been measured in the temperature range 1050–1350°C. A method based on change in conductivity through the penetration layer has been used for B and P. The p-n junction method has been used for the other elements. Aside from B and P, which have similar diffusional properties, the acceptor elements diffuse more rapidly than the donor elements. Diffusion coefficients are given by DB, P=10.5 exp − (85 000/RT), DA1=8.0 exp − (80 000/RT), DGa=3.6 exp − (81 000/RT), DIn, T1=16.5 exp − (90 000/RT), DAs=0.32 ×exp − (82 000/RT), DSb=5.6 exp − (91 000/RT), DBi=1030 exp − (107 000/RT) with an average estimated error of about ±40%. This corresponds to an error in the activation energies of about ±5 kcal. Sources of error including the effects of impurities in the oxides are discussed. D0 values in most cases conform to the predictions of Zener for substitutional diffusion.

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

“…The large number of impurity species we examine diffuse by a variety of mechanisms, 44,45 some of which change with temperature and some of which are unknown at the melting point. Hence 53 Au and Zn, 54 Co, 55 Cr, 56 Cu, 57 Fe, 58 Pt, 59 S, 60 Se, 61 Sn, 47 and Te. 62 Values for k e are values reported in: As, Bi, Cu, Ga, In, Sb, and Zn, 17 Au, 21 Co and Cr, 63 Fe, 64 S, 65 and Sn.…”

Historical perspective on the discovery of porous silicon

“…In 2003, Nick received both the IEEE Medal of Honor AND the (US) Presidential Medal in Technology, for his lifetime career on compound semiconductors. The use of chemical staining for delineation of PN junctions is described in [5] Turner [6] reported film growth in electrolytic etching of silicon and concluded later [7] that "The chemical etching of silicon is really an electrochemical process" The chemical stain became an indispensable tool in silicon device technology. Study of the properties of stain films included determination of porosity by refractive index [8].…”

Diffusion of Sb along dislocations in Si

“…1. According to Hart's model (10) The apparent diffusion coefficient of equation (1) and the pipe diffusivity of equation (2) a r e now related by equation (5). Obviously, the pre-exponential factors will differ by several orders of magnitude.…”