Resistivity distribution in bulk growth of silicon single crystals

Quality evaluation of resistivity-controlled silicon crystals

“…The experimental axial resistivity distribution in B-P codoping process was shown by Wang [11]. The specific resistivity profiles predicted numerically as a function of solidified fraction for conventional B-doping and B-P codoping process are compared.…”

“…It has been demonstrated using computer simulation that this method is useful for obtaining crystals with superior uniformity along the growth direction at a lower cost than can be obtained by the conventional melt growth process. Wang [11] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in the melt growth of silicon crystals and made its profile relatively uniform by B-P codoping method. Wang [12] studied the basic characteristic of 200 mm silicon single crystal grown using codoping method (i.e.…”

Resistivity distribution of silicon single crystals using codoping

“…The specific resistivity profiles predicted numerically as a function of solidified fraction for conventional B-doping and B-P codoping process are shown together using solid and dashed line, respectively. The detailed numerical analysis was explained by Wang [12]. In this paper, the mathematical modeling and numerical analysis are explained briefly.…”

“…Wang [12] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method.…”

“…2. The depth distribution of dopant concentration is uniform and it is equivalent to the conventional B doping process.Radial dopant concentration gradients are known to affect the local electrical properties of Axial resistivity distribution of B-P codoping silicon crystal as a function of solidified fraction[12]. Experimental data and simulation results are indicated by the filled circles and dashed line, respectively.…”