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We propose the simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution. Numerical simulations have been performed to study the transport phenomena of dopant impurities in conventional and proposed Bridgman silicon growth using the finite element method and implicit Euler time integration. It has been demonstrated using mathematical models and by numerical analysis that the axial specific resistivity distribution can be modified in horizontal Bridgman silicon growth and relatively uniform its profile is feasible by the proposed doping method.

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