Resistivity Inhomogeneities in Silicon Crystals

Mazur, R. G.

doi:10.1149/1.2426562

Cited by 33 publications

(6 citation statements)

References 2 publications

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“…[120,[154][155][156][157][158][159][160][161][162][163] Furthermore, it found broad application in electrochemistry, [164,165] biochemistry, [166] and semiconductor technology. [167][168][169] A comprehensive review of experimental studies is provided in ref. [152].…”

Section: Figurementioning

confidence: 99%

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Schultheiß

Rojac

Meier

2021

Adv Elect Materials

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Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional 2D systems for the development of next‐generation nanoelectronics. A major achievement in the field is the development of a fundamental framework that explains the emergence of enhanced electronic direct‐current conduction at the domain walls. Here, the much less explored behavior of ferroelectric domain walls under applied alternating‐current (AC) voltages is discussed. An overview of the recent advances in the nanoscale characterization is provided that allows for resolving the dynamic responses of individual domain walls to AC fields. In addition, different examples are presented, showing the unusual AC electronic properties that arise at neutral and charged domain walls in the kilo‐ to gigahertz regime. It is concluded with a discussion about the future direction of the field and novel application opportunities, expanding domain‐wall‐based nanoelectronics into the realm of AC technologies.

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Section: Figurementioning

confidence: 99%

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Schultheiß

Rojac

Meier

2021

Adv Elect Materials

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“…When comparing the area of one mesoplasma, in which the energy of the secondary breakdown of the p-n junction is localised during its breakdown, with the area of the rectifying clement as mm2 and 6~ lo3 mm2 respectively, it is quite understandable why such a great attention is paid to the study of the homogeneit y of semiconductor materials. Earlier studies of the distribution of resistivity over the cross-section of an ingot [4,5] show a considerable doping inhomogeneity of the monocrystal. Starting from entirely original measurements of the lifetime of minority charge carriers in high-resistivity p-type silicon, Zinimermann [6] pointed to the distribution inhoniogeneity not only of the doping material, but also of deep doping levels.…”

Section: Introductionmentioning

confidence: 99%

The behaviour of arsenic in silicon

Magden

Kal'nev

Kondrat'ev

et al. 1974

Phys. Stat. Sol. (a)

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An investigation is made of the distribution of resistivity, lifetime of minority charge carriers, concentration and mobility of majority charge carriers, and mechanical stresses in the cross section (80 mm in diameter) of monocrystalline silicon doped with arsenic up to a concentration of 6 x 1014 ~m -~. Changing of the above parameters in the thermal treatment of the semiconductor a t temperatures from 900 to 1300 "C is considered and the inf hence of 0,, C, and Sic on the thermostability of Si is analysed. Es wird die Verteilung des Widerstands, der Lebensdauer der Minoritiitsladungstrager, der Konzentration und Beweglichkeit der Majoritatsladungstrager und der mechanischen Spannungen im Querschnitt (80 mm im Durchmesser) von Siliziumeinkristallen m.it Arsendotierung bis zu Konzentrationen von 6 x 1014 ern+ untersucht. Weiter wird die Anderung dieser Parameter bei der Temperung der Halbleiter bei Temperaturen von 900 bis 1300 O C nntersucht und der EinfluB von 0,, C und Sic auf die Thermostabilitat von Si analysiert.

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“…Microscopic dopant variations are generated in this way along the axis of the rod. They are n o r m a l l y determined by means of a resistivity measurement with high local resolution (1,2).…”

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confidence: 99%

Investigation of Breakdown and Resistivity Striations in High‐Voltage Silicon Diodes

Mühlbauer

Sedlak

Voss

1975

J. Electrochem. Soc.

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The breakdown behavior of high‐voltage diodes prepared from silicon wafers that were cut parallel to the rod axis was observed by means of the infrared breakdown radiation. The breakdown patterns were striated and could be correlated to spreading resistance measurements on a microscopic scale. It could be confirmed experimentally that the breakdown in material with resistivity variations not only depends on the absolute resistivity value at each location, but also to a large extent on the wave form and the period of the variations. Only in diodes in which the microscopic resistivity variations had high amplitudes and a distinct periodicity with wavelengths longer than the extent of the space charge region did individual minima lead to individual clearly separated breakdown lines.

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Resistivity Inhomogeneities in Silicon Crystals

Cited by 33 publications

References 2 publications

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls

The behaviour of arsenic in silicon

Investigation of Breakdown and Resistivity Striations in High‐Voltage Silicon Diodes

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