Resistivity-microstructure correlation of self-annealed electrodeposited copper thin films

Alshwawreh, Nidal; Militzer, Matthias; Bizzotto, Dan; Kuo, Jui‐Chao

doi:10.1016/j.mee.2012.02.035

Cited by 24 publications

(17 citation statements)

References 32 publications

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“…4b). This self-annealing behavior of electroplated Cu has been reported in the literature [12,[20][21][22]. It was also found that the most frequent grain orientations in the electroplated Cu film after 270 min were 111 (Fig.…”

Section: Resultssupporting

confidence: 86%

“…In Fig. 6(c) 12 This trend is reasonable because 1/T is an exponential factor in determining t'. The experimental results are in good agreement with the calculated values at Q ≈ 90 KJ/mol for 3…”

Section: Accepted Manuscriptmentioning

confidence: 54%

“…This finding indicated that the existence of impurities in the electroplated Cu film is very likely a key factor in pinhole formation during the postetching process. Additionally, the as-deposited Cu film generally possesses a nanocrystalline microstructure, which is unstable and undergoes a spontaneous evolution in grain growth [12], known as self-annealing. Wang et al [13] and Thompson and Brons [14] revealed that the grain structure/size and the impurity content within the as-electroplated Cu films strongly correlated with the annealing procedure.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Formation mechanism of pinholes in electroplated Cu films and its mitigation

Chen

Hsieh²,

Lee

et al. 2015

Thin Solid Films

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Section: Resultssupporting

confidence: 86%

Section: Accepted Manuscriptmentioning

confidence: 54%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Formation mechanism of pinholes in electroplated Cu films and its mitigation

Chen

Hsieh²,

Lee

et al. 2015

Thin Solid Films

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“…Similar observations were already noticed in literature on films prepared from SFCD with alcohols or hydrogen as reducing agent [22], sputtered [5,18,23,24], metal vapor vacuum arc, ion implantation and ion beam assistant deposition technologies [25], aerosol deposition [8], pulse electroplating [26], electrodeposited [27] and CVD [28] on various substrates. An increase of the I(111)/I(200) ratio (value equal to 2.17 if intensities are taken from ICDD 01-085-1326 standard data) and values superior to 0.33 are noticed when the substrate temperature increases or after annealing for SCFD films.…”

Section: Texture Propertiessupporting

confidence: 86%

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

et al. 2017

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:A comparison of crystallinity, microstructure, surface morphology and electrical conductivity is proposed for the deposition of copper films, using supercritical fluid chemical deposition (SFCD) and RF magnetron sputtering techniques. Both preparation methods yield nanocrystalline Cu films (< 100 nm) but SFCD gives access to a higher crystallinity for the same AlN substrate temperature during the deposit. Based on the film characteristics, a comparison of the evolution of electrical properties is done for RF magnetron sputtered copper films and SFCD ones with H2 as reducing agent. Uniform strain values are significantly reduced when SFCD technique is used and crystallinity is highly increased leading to lower resistivity values for a same crystallite size. This study demonstrates the viability of the SFCD technique to produce high quality nanostructured copper thin films with low resistivity values.

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“…The microstructure evolution at room temperature (R.T.) called self-annealing is well known to occur in electrodeposited lms of copper [1][2][3][4][5][6] and silver [7][8][9] . Self-annealing occurs within a very short time after electrodeposition such as within one day.…”

Section: Introductionmentioning

confidence: 99%

<i>In Situ</i> Observation of Self-Annealing Behaviors of (001)-Oriented Electrodeposited Silver Film by EBSD Method

et al. 2016

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The self-annealing behaviors of an electrodeposited silver lm preferentially oriented in the (001) direction were investigated by in situ electron backscatter diffraction pattern (EBSD) analysis. It was con rmed that there are ne grains with crystallite sizes of approximately 20 nm in an as-electrodeposited silver lm by X-ray diffraction (XRD) analysis. Self-annealing starts after storage for about 2 h at room temperature (R.T.) and recrystallization is almost complete after storage for 6 h. The area fraction of (001)-oriented grains rapidly increases after storage for about 2 h at R.T. and saturates in the range from 70% to 80% after storage for 6 h. In the initial stage of self-annealing, (001)-oriented and (212)-oriented recrystallized grains nucleate. Moreover, (001)-oriented grains mainly grow during subsequent storage.

show abstract

Resistivity-microstructure correlation of self-annealed electrodeposited copper thin films

Cited by 24 publications

References 32 publications

Formation mechanism of pinholes in electroplated Cu films and its mitigation

Formation mechanism of pinholes in electroplated Cu films and its mitigation

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

<i>In Situ</i> Observation of Self-Annealing Behaviors of (001)-Oriented Electrodeposited Silver Film by EBSD Method

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