International Conference on Extreme Ultraviolet Lithography 2019 2019
DOI: 10.1117/12.2537068
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Resolution enhancement for lensless mask metrology with RESCAN

Abstract: The EUV photomask is a key component of the lithography process for semiconductor manufacturing. A critical defect on the mask could be replicated on several wafers, causing a significant production yield reduction. For this reason, actinic patterned mask inspection is an important metrology component for EUV lithography. The RESCAN microscope is a lensless imaging platform dedicated to EUV mask defect inspection and metrology. The resolution of the tool is about 35 nm, which is similar to that of state-of-the… Show more

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“…The imaging numerical aperture along the axis parallel to the incidence plane (NA Y ) is limited by the extent of the condenser optics as shown in figure 1. 4 If α is the minimum incidence angle allowed by the condenser and β is the maximum reflection angle allowed by the multilayer on the EUV mask sample, the maximum non vignetted NA Y value for a chief ray angle θ 0 is given by:…”
Section: Imaging Namentioning
confidence: 99%
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“…The imaging numerical aperture along the axis parallel to the incidence plane (NA Y ) is limited by the extent of the condenser optics as shown in figure 1. 4 If α is the minimum incidence angle allowed by the condenser and β is the maximum reflection angle allowed by the multilayer on the EUV mask sample, the maximum non vignetted NA Y value for a chief ray angle θ 0 is given by:…”
Section: Imaging Namentioning
confidence: 99%
“…This is a not a problem for the image reconstruction algorithm employed in RESCAN because each illumination probe and its corresponding sample image is reconstructed independently. 4…”
Section: Condenser Mirror Mmentioning
confidence: 99%
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