Resolution, LER, and sensitivity limitations of photoresists

Gallatin, Gregg M.; Naulleau, Patrick; Niakoula, Dimitra; Brainard, Robert L.; Hassanein, Elsayed; Matyi, R. J.; Thackeray, Jim; Spear, Kathleen; Dean, Kim

doi:10.1117/12.772763

Cited by 51 publications

(33 citation statements)

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“…One way to improve LER is to reduce the photo speed, but again, this requires high EUV power. This dilemma can be explained by the famous RLS (Resolution-Line edge roughness-Sensitivity) constraint for EUV lithography and theoretical treatment has been developed [38] . …”

Section: Figurementioning

confidence: 99%

Review of computational lithography modeling: focusing on extending optical lithography and design-technology co-optimization

Lai

2012

Advanced Optical Technologies

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Advances in computational lithography over the last 10 years have been instrumental to the continued scaling of semiconductor devices. Competitive scaling requires two types of complementary models: fast predictive empirical models that can be used for pattern correction and verification; rigorous physical models that can be used to identify key physical effects that must be considered to ensure pattern fidelity, but are too resource intensive to use for full chip applications. Today, all computational lithography efforts such as the optical proximity correction (OPC) and the optical rules check (ORC) depend on the ability to predictively model the lithography and metrology processes. We discuss some of the current modeling practices in optics, mask, resist and etching, leading to the " Holy Grail " of predictively modeling entire patterning process which we call " virtual fab " . Extreme ultraviolet (EUV) modeling is discussed due to its potential to extend optical lithography scaling for future nodes. Modeling of novel technologies such as Diblock Copolymer patterning is also discussed to demonstrate new opportunities for continued scaling. Complexity of the " virtual fab " approach is extremely high as there are multiple dimensions in this approach. The need to overcome this complexity, by reducing the number of dimensions of the problem, is evident. Lastly, the ability to leverage lithography modeling in design co-optimization is an important element of semiconductor device scaling.

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Section: Figurementioning

confidence: 99%

Review of computational lithography modeling: focusing on extending optical lithography and design-technology co-optimization

Lai

2012

Advanced Optical Technologies

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“…EUV resists must simultaneously meet three requirements: high resolution, low line edge roughness (LER), 1 and high sensitivity. 2 We have proposed that the best way to simultaneously improve these three properties in EUV resists is to increase the number of strong acids generated per photon absorbed during exposure 3 and we assert that acid amplifiers may be one of the best ways to achieve decompose in the presence of acid to generate more acid via acid-catalyzed mechanisms. 4 When the product acid is strong enough to catalyze the decomposition of the AA, the decomposition occurs autocatalytically ( Figure 1).…”

Section: Introductionmentioning

confidence: 97%

Fluorine-Stabilized Acid Amplifiers for Use in EUV Lithography

Hosoi

Cardineau

Kruger

et al. 2012

J. Photopol. Sci. Technol.

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This paper presents two new concepts that together provide a 100,000X improvement in stability for AAs that produce highly-fluorinated, strong sulfonic acids. These two new design concepts are based on (1) an olefin-trigger structure and (2) a trifluoromethyl groupalpha to the sulfonic ester. These approaches led to the synthesis of the first stable acid amplifier that generates triflic acid and for the synthesis of AAs that are stable enough to be used as monomers in free-radical polymerization reactions yet produce very strong, fluorinated acids. Lastly, we present preliminary results where one new AA is able to improve the LER of a control resist from 4.6 ± 0.5 nm to 2.1 ± 0.1 nm.

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“…The international technology roadmap for semiconductors (ITRS) requires less than 3-nm line edge roughness (LER) for the 30-nm pattern size. However, the surface roughness of sidewalls and sizes of patterned resists, called LER, do not reduce automatically with respect to the resolution, so LER can become the most important issue [1]. EUVL has many characteristics in common with conventional optical lithography, but a multilayer reflective mirror has to be used in EUVL, instead of a refractive lens, due to the high absorption in the material.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Simulation of Line Edge Roughness for EUV Resists

Kim¹

2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-With the extreme ultraviolet (EUV) lithography, the performance limit of chemically amplified resists has recently been extended to 16-and 11-nm nodes. However, the line edge roughness (LER) and the line width roughness (LWR) are not reduced automatically with this performance extension. In this paper, to investigate the impacts of the EUVL mask and the EUVL exposure process on LER, EUVL is modeled using multilayer-thin-film theory for the mask structure and the Monte Carlo (MC) method for the exposure process. Simulation results demonstrate how LERs of the mask transfer to the resist and the exposure process develops the resist LERs.

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Resolution, LER, and sensitivity limitations of photoresists

Cited by 51 publications

References 1 publication

Review of computational lithography modeling: focusing on extending optical lithography and design-technology co-optimization

Review of computational lithography modeling: focusing on extending optical lithography and design-technology co-optimization

Fluorine-Stabilized Acid Amplifiers for Use in EUV Lithography

Modeling and Simulation of Line Edge Roughness for EUV Resists

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