Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process

The impact of latent image quality on line edge roughness (LER) in 100, 50 and 2 keV electron beam lithography was investigated. There is a minimum LER of about 2 nm achievable with current resist systems though the LER increases as a result of the amplification of bandwidth of the threshold level by the slope of the quasi-beam profile (QBP), which is a latent image profile in which the line spread function is assumed to be Gaussian. A plausible cause of the minimum LER is the domain size of resist materials such as polymer/monomer aggregation. Analysis of the LER dependence on the 1/slope revealed the origins of the bandwidth of the threshold level: variation of the latent image profile in terms of image blur and intensity. Independent of the electron energies and resists used, the resolution of an isolated line was proportional to the blur of the QBP with an intrinsic resolution of the resists about 5 nm which has been ignored for photolithography.

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Challenges to Ultra-thin Resist Process for LEEPL

Yoshizawa

Miyamoto

Nakano

et al. 2004

J. Photopol. Sci. Technol.

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Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process

Abstract: Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.Low energy electron-beam proximity projection lithography: Discovery of a missing link

Cited by 3 publications

References 6 publications

Impacts of 30-nm-thick resist on improving resolution performance of low-energy electron beam lithography

Impacts of 30-nm-thick resist on improving resolution performance of low-energy electron beam lithography

Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography

Challenges to Ultra-thin Resist Process for LEEPL

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