Resonant Bragg structures based on III-nitrides

Bolshakov, A. S.; Chaldyshev, V. V.; Lundin, W. V.; Сахаров, А. В.; Tsatsulnikov, A. F.; Yagovkina, M. A.; Заварин, Е. Е.

doi:10.1557/jmr.2014.397

Cited by 8 publications

(3 citation statements)

References 24 publications

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“…[17], the averaged indium concentration and QW width are estimated to be 7.5% and 2.5 nm, respectively, and the measured period of the multiple QW system is about 72 nm, leading to 69.5 nm barrier width. As a result of the periodicity we observed a Bragg reflection peak in the stationary optical reflection spectra [6]. At cryogenic temperatures the peak is centered at 3.393 eV (365.4 nm) and its full width is about 32 meV (3.5 nm).…”

Section: Sample and Methodsmentioning

confidence: 73%

“…It was already noted above that the compositional disorder in (In,Ga)N/GaN QWs is strong with details depending on technology. The sample under study was grown with special care to reduce the compositional broadening [6]. Nevertheless, the Stokes shift as large as 20 meV at room temperature [17] indicates a strong lateral localization of the QW excitons.…”

Section: Discussionmentioning

confidence: 99%

“…In state-of-the-art growth methods, such as metalorganic vapor-phase epitaxy (MOVPE), the compositional disorder in (In,Ga)N/GaN QWs can be controlled by the growth conditions, which can lead to either a thermodynamically favorable highly non-uniform indium distribution or kinetically limited metastable atomic arrangements with almost statistical compositional fluctuations [5].This makes possible to optimize the inhomogeneous broadening of the QW exciton transitions [6]. A reasonably large broadening seems to be in favor of a better performance of (In,Ga)N/GaN QW LEDs, whereas it has a negative impact on the performance of (In,Ga)N/GaN QW lasers [7].…”

Section: Introductionmentioning

confidence: 99%

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Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells

et al. 2018

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We study the coherent dynamics of localized excitons in 100-periods of 2.5 nm thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43 meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29 µeV as well as the relatively weak exciton-phonon interaction (0.8 µeV/K) confirm a strong, quantum dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers.

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Section: Sample and Methodsmentioning

confidence: 73%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells

et al. 2018

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Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells

Bolshakov

Chaldyshev

Заварин

et al. 2017

Journal of Applied Physics

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We studied the optical properties of periodic InGaN/GaN multiple quantum well systems with different numbers of periods. A resonant increase in the optical reflection and simultaneous suppression of the optical absorption have been revealed experimentally at room temperature when the Bragg and exciton resonances were tuned to each other. Numerical modeling with a single set of parameters gave a quantitatively accurate fit of the experimental reflection and transmission spectra in a wide wavelength range and various angles of the light incidence. The model included both exciton resonance and non-resonant band-to-band transitions in the InGaN quantum wells, as well as Rayleigh light scattering in the GaN buffer layer. The analysis also involved x-ray diffraction and photoluminescence data. It allowed us to determine the key parameters of the structure. In particular, the radiative broadening of the InGaN QW excitons was evaluated as 0.20 ± 0.02 meV.

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Critical spatial disorder in InGaN resonant Bragg structures

Иванов

Chaldyshev

Ushanov

et al. 2022

Applied Physics Letters

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We study a disorder-induced transformation of the resonant optical reflection from a nearly periodic system of quasi-2D excitons in the InGaN quantum wells arranged as a resonant Bragg structure (RBS). We show that there is a critical deviation from the exact periodicity when the reflection by a single super-radiant exciton–polariton mode is transformed into a multimode spectrum. This critical disorder appears to be inversely proportional to the number of periods in the RBS. Using a numerical model which describes the experimentally observed optical spectra, we found the critical standard deviation from exact periodicity to be 1.76%, 1.0%, and 0.45% for InGaN-based RBS with 60, 100, and 200 periods, respectively.

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Resonant Bragg structures based on III-nitrides

Cited by 8 publications

References 24 publications

Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells

Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells

Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells

Critical spatial disorder in InGaN resonant Bragg structures

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