Resonant cavity enhanced photonic devices

Ünlü, M. Selim; Strite, S.

doi:10.1063/1.360322

Cited by 634 publications

(230 citation statements)

References 146 publications

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“…Its effective implementation requires additional on-chip optical elements redirecting the light from horizontal waveguides to vertical resonant cavities. On the other hand, the advantage of vertical configuration is the opportunity of the application of distributed Bragg reflectors based on semiconductor heterostructures as the resonator mirrors [34]. Such reflectors are characterized by the adaptability to streamlined manufacturing.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

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Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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Abstract:In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A III B V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results' adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

“…If β = 1, the peak quantum efficiency of such devices at the resonance wavelengths can be calculated as follows [34]:…”

Section: Models and Simulation Methodsmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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“…The development of photodiode devices on micro and nanophotonic structures has opened new possibilities over the standard technology. The impinging light is strongly confined inside those photonic structures enhancing the photocarrier generation, as it has been observed in nanowire resonators 2,3 and in the electrooptical response of the optical cavities [4][5][6] . Simultaneously, photoexcited carriers are generated close to the collecting electrodes, boosting the power generation in photovoltaic cells [7][8][9][10][11] .…”

mentioning

confidence: 90%

All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region

et al. 2014

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Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show the first example of a photodiode developed on a micrometre scale sphere made of polycrystalline silicon whose photocurrent shows the Mie modes of a classical spherical resonator. The long dwell time of resonating photons enhances the photocurrent response, extending it into the infrared region well beyond the absorption edge of bulk silicon. It opens the door for developing solar cells and photodetectors that may harvest infrared light more efficiently than silicon photovoltaic devices that are so far developed.

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“…The resonant-cavity detector design [24] is another technique that can be applied to Si detectors [25]- [27] to improve efficiency while maintaining a thin absorbing layer. Schaub et al [27] reported an example of such detectors that utilized Si laterally grown over a Si/SiO 2 Bragg reflecting mirror stack.…”

Section: Soi Detectorsmentioning

confidence: 99%

Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

Koester

Schaub²,

Dehlinger

et al. 2006

IEEE J. Select. Topics Quantum Electron.

147

115

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Abstract-An overview of recent results on high-speed germanium-on-silicon-on-insulator (Ge-on-SOI) photodetectors and their prospects for integrated optical interconnect applications are presented. The optical properties of Ge and SiGe alloys are described and a review of previous research on SOI and SiGe detectors is provided as a motivation for the Ge-on-SOI detector approach. The photodetector design is described, which consists of lateral alternating p-and n-type surface contacts on an epitaxial Ge absorbing layer grown on an ultrathin-SOI substrate. When operated at a bias voltage of −0.5 V, 10 µm ×10 µm devices have dark current I dark , of only ∼10 nA, a value that is nearly independent of finger spacing S, between S = 0.3 µm and 1.3 µm. Detectors with S = 1.3 µm have external quantum efficiencies η, of 52% (38%) at λ = 895 nm (850 nm) with corresponding responsivities of 0.38 A/W (0.26 A/W). The wavelength-dependence of η agrees fairly well with expectations, except at longer wavelengths, where Si up-diffusion into the Ge absorbing layer reduces the efficiency. Detectors with 10 µm ×10 µm area and S = 0.6 µm have −3-dB bandwidths as high as 29 GHz, and can simultaneously achieve a bandwidth of 27 GHz with I dark = 24 nA, at a bias of only −1 V, while maintaining high efficiency of η = 46%(33%), at λ = 895 nm (850 nm). Analysis of the finger spacing and areadependence of the device speed indicates that the performance at large finger spacing is transit-time-limited, while at small finger spacing, RC delays limit the bandwidth. Methods to improve the device performance are presented, and it is shown that significant improvement in the speed and efficiency both at λ = 850 and 1300 nm can be expected by optimizing the layer structure design.

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Resonant cavity enhanced photonic devices

Cited by 634 publications

References 146 publications

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region

Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

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