Resonant-Cavity-Enhanced Single-Photon Avalanche Diodes on Reflecting Silicon Substrates

Ghioni, M.; Armellini, Giacomo; Maccagnani, Piera; Rech, Ivan; Emsley, M.K.; Ünlü, M. Selim

doi:10.1109/lpt.2008.916926

Cited by 27 publications

(29 citation statements)

References 7 publications

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“…However, it still provides 7.7-% PDP at the 850-nm wavelength where silicon has very low absorption coefficient, because the PDP of the SOI CMOS SPAD is enhanced at long wavelengths due to the cavity-like behavior of the interface between silicon and BOX layers. Such effect has been also reported in [10,11]. …”

Section: Pdpsupporting

confidence: 72%

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A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

Lee¹,

Sun²,

Charbon³

2015

Opt. Express

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This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P + /N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two closely spaced N-well regions. The SPAD electric-field profile is analyzed by means of simulation to predict the breakdown voltage and the effectiveness of premature edge breakdown. Measurements confirm these predictions and also provide a complete characterization of the device, including current-voltage characteristics, dark count rate (DCR), photon detection probability (PDP), afterpulsing probability, and photon timing jitter. The SOI CMOS SPAD has a PDP above 25% at 490-nm wavelength and, thanks to built-in optical sensitivity enhancement mechanisms, it is as high as 7.7% at 850-nm wavelength. The DCR is 244 Hz/μm 2 , and the afterpulsing probability is less than 0.1% for a dead time longer than 200 ns. The SPAD exhibits a timing response without exponential tail and provides a remarkable timing jitter of 65 ps (FWHM). The new device is well suited to operate in backside illumination within complex three-dimensional (3D) integrated circuits, thus contributing to a great improvement of fill factor and jitter uniformity in large arrays. and W. Brockherde, "CMOS SPADs with up to 500 μm diameter and 55% detection efficiency at 420 nm," J.

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Section: Pdpsupporting

confidence: 72%

“…The DCR of this device is comparable to or about one order of magnitude higher than that of SPADs fabricated in bulk wafers. However, the DCR is similar to or better than that of SPADs based on SOI wafers in non-standard processes which is in the range between 3.5 kHz and 100 kHz [6,10,11]. …”

Section: I-v Characteristicsmentioning

confidence: 99%

A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

Lee¹,

Sun²,

Charbon³

2015

Opt. Express

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show abstract

“…6; the DCR is dominated by band-to-band tunneling instead of trap-assisted avalanching, proving the high quality of the top silicon layer. 7, has some resonant-like peaks above 700nm, due to the cavity-like structure of the multiplication region with an interface between silicon and buried oxide similar to [6]; a similar behavior was also seen in PDP (Fig. 7), where PDP at long wavelength (700nm ~ 900nm) is enhanced.…”

Section: Measurement and Analysismentioning

confidence: 55%

A flexible ultra-thin-body SOI single-photon avalanche diode

Sun

Mimoun

Charbon

et al. 2013

2013 IEEE International Electron Devices Meeting

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“…New developments in planar-epitaxial SPAD technology are mainly concerned with the improvement of the PDE in the red wavelength range (600 nm to 900 nm), either by incorporating a resonant cavity in the device structure [83] or by increasing the thickness of the absorption region [84]. The latter approach resulted in a red-enhanced (RE) SPAD device having a separate absorption and multiplication structure.…”

Section: Available Spad Technologiesmentioning

confidence: 99%

Silicon Photon-Counting Avalanche Diodes for Single-Molecule Fluorescence Spectroscopy

Michalet

Ingargiola

Colyer

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements.

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Resonant-Cavity-Enhanced Single-Photon Avalanche Diodes on Reflecting Silicon Substrates

Cited by 27 publications

References 7 publications

A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

A flexible ultra-thin-body SOI single-photon avalanche diode

Silicon Photon-Counting Avalanche Diodes for Single-Molecule Fluorescence Spectroscopy

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